Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Zhang, E., Ryder, L. D., Reed, R. A., Schrimpf, R. D., Kozub, J. A., Lauenstein, J.-M., & Javanainen, A. (2019). Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments. IEEE Transactions on Nuclear Science, 66(7), 1694-1701. https://doi.org/10.1109/TNS.2019.2922883
Published in
IEEE Transactions on Nuclear ScienceAuthors
Date
2019Copyright
© 2019 IEEE.
A two-photon absorption technique is used to
understand the mechanisms of single-event effects in silicon
carbide power MOSFETs and power junction barrier Schottky
diodes. The MOSFETs and diodes have similar structures
enabling identification of effects associated specifically with the
parasitic bipolar structure that is present in the MOSFETs, but
not the diodes. The collected charge in the diodes varies only
with laser depth, whereas it varies with depth and lateral
position in the MOSFETs. Optical simulations demonstrate that
the variations in collected charge observed are from the
semiconductor device structure, and not from metal/passivationinduced reflection. The difference in the spatial dependence of
collected charge between the MOSFET and diode is explained by
bipolar amplification of the charge carriers in the MOSFETs.
TCAD device simulations extend this analysis to heavy ioninduced charge collection. In addition, there is discussion
comparing this analysis with experimental results from prior
works that show enhanced charge collection resulting from
heavy ion irradiation.
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Publisher
Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
0018-9499Keywords
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https://converis.jyu.fi/converis/portal/detail/Publication/30946007
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Additional information about funding
10.13039/100000104-National Aeronautics and Space Administration; NASA Electronic Parts and Packaging ProgramLicense
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