Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D.

doi:10.1109/TDMR.2018.2842253

dc.contributor.author	Javanainen, Arto
dc.contributor.author	Muinos, Henrique Vazquez
dc.contributor.author	Nordlund, Kai
dc.contributor.author	Galloway, Kenneth F.
dc.contributor.author	Turowski, Marek
dc.contributor.author	Schrimpf, Ronald D.
dc.date.accessioned	2018-09-24T10:39:29Z
dc.date.available	2018-09-24T10:39:29Z
dc.date.issued	2018
dc.identifier.citation	Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>18</i>(3), 481-483. <a href="https://doi.org/10.1109/TDMR.2018.2842253" target="_blank">https://doi.org/10.1109/TDMR.2018.2842253</a>
dc.identifier.other	CONVID_28089623
dc.identifier.other	TUTKAID_77833
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/59634
dc.description.abstract	Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation	fi
dc.format.mimetype	application/pdf
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartofseries	IEEE Transactions on Device and Materials Reliability
dc.rights	In Copyright
dc.subject.other	ion radiation effects
dc.subject.other	modeling
dc.subject.other	power semiconductor devices,
dc.subject.other	Schottky diodes
dc.subject.other	silicon carbide
dc.title	Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
dc.type	article
dc.identifier.urn	URN:NBN:fi:jyu-201809064031
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.contributor.oppiaine	Kiihdytinlaboratorio	fi
dc.contributor.oppiaine	Accelerator Laboratory	en
dc.type.uri	http://purl.org/eprint/type/JournalArticle
dc.date.updated	2018-09-06T06:15:18Z
dc.type.coar	http://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatus	peerReviewed
dc.format.pagerange	481-483
dc.relation.issn	1530-4388
dc.relation.numberinseries	3
dc.relation.volume	18
dc.type.version	acceptedVersion
dc.rights.copyright	@ IEEE, 2018.
dc.rights.accesslevel	openAccess	fi
dc.subject.yso	ionit
dc.subject.yso	ionisoiva säteily
dc.subject.yso	mallintaminen
dc.subject.yso	puolijohteet
dc.format.content	fulltext
jyx.subject.uri	http://www.yso.fi/onto/yso/p9015
jyx.subject.uri	http://www.yso.fi/onto/yso/p459
jyx.subject.uri	http://www.yso.fi/onto/yso/p3533
jyx.subject.uri	http://www.yso.fi/onto/yso/p18256
dc.rights.url	http://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi	10.1109/TDMR.2018.2842253
dc.type.okm	A1

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Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages ...
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The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as ...
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The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ...
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Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ...

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

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