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dc.contributor.authorJavanainen, Arto
dc.contributor.authorMuinos, Henrique Vazquez
dc.contributor.authorNordlund, Kai
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorTurowski, Marek
dc.contributor.authorSchrimpf, Ronald D.
dc.date.accessioned2018-09-24T10:39:29Z
dc.date.available2018-09-24T10:39:29Z
dc.date.issued2018
dc.identifier.citationJavanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>18</i>(3), 481-483. <a href="https://doi.org/10.1109/TDMR.2018.2842253" target="_blank">https://doi.org/10.1109/TDMR.2018.2842253</a>
dc.identifier.otherCONVID_28089623
dc.identifier.otherTUTKAID_77833
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/59634
dc.description.abstractHeavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradationfi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.ispartofseriesIEEE Transactions on Device and Materials Reliability
dc.rightsIn Copyright
dc.subject.otherion radiation effects
dc.subject.othermodeling
dc.subject.otherpower semiconductor devices,
dc.subject.otherSchottky diodes
dc.subject.othersilicon carbide
dc.titleMolecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201809064031
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-09-06T06:15:18Z
dc.description.reviewstatuspeerReviewed
dc.format.pagerange481-483
dc.relation.issn1530-4388
dc.relation.numberinseries3
dc.relation.volume18
dc.type.versionacceptedVersion
dc.rights.copyright@ IEEE, 2018.
dc.rights.accesslevelopenAccessfi
dc.subject.ysoionit
dc.subject.ysoionisoiva säteily
dc.subject.ysomallintaminen
dc.subject.ysopuolijohteet
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p9015
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
jyx.subject.urihttp://www.yso.fi/onto/yso/p3533
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1109/TDMR.2018.2842253


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