Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. IEEE Transactions on Device and Materials Reliability, 18(3), 481-483. https://doi.org/10.1109/TDMR.2018.2842253
Authors
Date
2018Copyright
@ IEEE, 2018.
Heavy ion irradiation increases the leakage current
in reverse-biased SiC Schottky diodes. This work demonstrates,
via molecular dynamics simulations, that a combination of bias
and ion-deposited energy is required to produce the degradation
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Institute of Electrical and Electronics EngineersISSN Search the Publication Forum
1530-4388Keywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/28089623
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