dc.contributor.author | Julin, Juhani | |
dc.contributor.author | Chaudhuri, Saumyadip | |
dc.contributor.author | Laitinen, Mikko | |
dc.contributor.author | Sajavaara, Timo | |
dc.contributor.author | Maasilta, Ilari | |
dc.date.accessioned | 2017-01-11T10:48:07Z | |
dc.date.available | 2017-01-11T10:48:07Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Julin, J., Chaudhuri, S., Laitinen, M., Sajavaara, T., & Maasilta, I. (2016). Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions. <i>AIP Advances</i>, <i>6</i>(12), Article 125026. <a href="https://doi.org/10.1063/1.4972205" target="_blank">https://doi.org/10.1063/1.4972205</a> | |
dc.identifier.other | CONVID_26449081 | |
dc.identifier.other | TUTKAID_72450 | |
dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/52693 | |
dc.description.abstract | In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties
of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese
doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and
amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing
treatment improves the stability of the junctions, increases their tunneling resistance
and does not have a negative impact on the low-temperature current-voltage characteristics.
The measured 1 / f resistance noise of the junctions also changes after
annealing, in the best case decreasing by over an order of magnitude. All these observations
show that annealing is a viable route to improve NIS junction devices after
the sample has been fabricated. | |
dc.language.iso | eng | |
dc.publisher | American Institute of Physics | |
dc.relation.ispartofseries | AIP Advances | |
dc.subject.other | superconducting tunnel junctions | |
dc.subject.other | tunnel junctions | |
dc.subject.other | superconducting metals | |
dc.title | Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions | |
dc.type | article | |
dc.identifier.urn | URN:NBN:fi:jyu-201701091093 | |
dc.contributor.laitos | Fysiikan laitos | fi |
dc.contributor.laitos | Department of Physics | en |
dc.contributor.oppiaine | Nanoscience Center | fi |
dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
dc.contributor.oppiaine | Nanoscience Center | en |
dc.contributor.oppiaine | Accelerator Laboratory | en |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
dc.date.updated | 2017-01-09T10:15:12Z | |
dc.type.coar | journal article | |
dc.description.reviewstatus | peerReviewed | |
dc.relation.issn | 2158-3226 | |
dc.relation.numberinseries | 12 | |
dc.relation.volume | 6 | |
dc.type.version | publishedVersion | |
dc.rights.copyright | © 2016 Author(s). All article content, except where
otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. | |
dc.rights.accesslevel | openAccess | fi |
dc.rights.url | https://creativecommons.org/licenses/by/4.0/ | |
dc.relation.doi | 10.1063/1.4972205 | |