Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
Julin, J., Chaudhuri, S., Laitinen, M., Sajavaara, T., & Maasilta, I. (2016). Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions. AIP Advances, 6 (12), 125026. doi:10.1063/1.4972205
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AIP AdvancesDate
2016Copyright
© 2016 Author(s). All article content, except where
otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties
of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese
doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and
amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing
treatment improves the stability of the junctions, increases their tunneling resistance
and does not have a negative impact on the low-temperature current-voltage characteristics.
The measured 1 / f resistance noise of the junctions also changes after
annealing, in the best case decreasing by over an order of magnitude. All these observations
show that annealing is a viable route to improve NIS junction devices after
the sample has been fabricated.
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American Institute of PhysicsISSN Search the Publication Forum
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Except where otherwise noted, this item's license is described as © 2016 Author(s). All article content, except where
otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.