Showing items with similar title or keywords.

• Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions 

  Julin, Juhani; Chaudhuri, Saumyadip; Laitinen, Mikko; Sajavaara, Timo; Maasilta, Ilari (American Institute of Physics, 2016)

  In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, ...

• Normal-Metal–Insulator–Superconductor Tunnel Junction With Atomic-Layer-Deposited Titanium Nitride as Superconductor 

  Torgovkin, Andrii; Chaudhuri, Saumyadip; Malm, Jari; Sajavaara, Timo; Maasilta, Ilari (Institute of Electrical and Electronics Engineers, 2015)

• Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions 

  Chaudhuri, Saumyadip; Maasilta, Ilari (American Institute of Physics, 2014)

  We report the development of superconducting tantalum nitride (TaN x ) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO x and TaO x (Cu-AlO x -Al-TaN x and ...

• Impact of non-idealities on the conductance characteristics of superconductor-insulator-normal metal-insulator-superconductor tunnel junctions 

  Chaudhuri, Saumyadip; Maasilta, Ilari (Institute of Physics, 2012)

  We have investigated the effect of asymmetry in tunnelling resistance of individual normal metal-insulator-superconductor (NIS) tunnel junctions that constitute a SINIS pair, both experimentally and theoretically. Ours ...

• One dimensional arrays of small normal metal tunnel junctions as thermometers and single charge pumps 

  Hirvi, Kari (1997)