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dc.contributor.authorJulin, Juhani
dc.contributor.authorChaudhuri, Saumyadip
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMaasilta, Ilari
dc.date.accessioned2017-01-11T10:48:07Z
dc.date.available2017-01-11T10:48:07Z
dc.date.issued2016
dc.identifier.citationJulin, J., Chaudhuri, S., Laitinen, M., Sajavaara, T., & Maasilta, I. (2016). Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions. <i>AIP Advances</i>, <i>6</i>(12), Article 125026. <a href="https://doi.org/10.1063/1.4972205" target="_blank">https://doi.org/10.1063/1.4972205</a>
dc.identifier.otherCONVID_26449081
dc.identifier.otherTUTKAID_72450
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/52693
dc.description.abstractIn this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated.
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesAIP Advances
dc.subject.othersuperconducting tunnel junctions
dc.subject.othertunnel junctions
dc.subject.othersuperconducting metals
dc.titleStability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201701091093
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineNanoscience Centerfi
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineNanoscience Centeren
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2017-01-09T10:15:12Z
dc.type.coarjournal article
dc.description.reviewstatuspeerReviewed
dc.relation.issn2158-3226
dc.relation.numberinseries12
dc.relation.volume6
dc.type.versionpublishedVersion
dc.rights.copyright© 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
dc.rights.accesslevelopenAccessfi
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.1063/1.4972205


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© 2016 Author(s). All article content, except where
otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
Except where otherwise noted, this item's license is described as © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.