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• Single-event effects of space and atmospheric radiation on memory components 

  Bosser, Alexandre Louis (University of Jyväskylä, 2017)

  Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory ...

• The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance 

  Coronetti, Andrea; Alia Garcia, Ruben; Cerutti, Francesco; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigne, Frederic (Institute of Electrical and Electronics Engineers (IEEE), 2021)

  Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event ...

• Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes 

  Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)

  Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to ...

• Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes 

  Javanainen, Arto; Galloway, Kenneth F.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2016)

  Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure ...

• Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence 

  Javanainen, Arto; Turowski, Marek; Galloway, Kenneth F.; Nicklaw, Christopher; Ferlet-Cavrois, Véronique; Bosser, Alexandre; Lauenstein, Jean-Marie; Muschitiello, Michele; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)

  Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages ...