Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
Yang, J., Bahrami, A., Ding, X., Zhao, P., He, S., Lehmann, S., Laitinen, M., Julin, J., Kivekäs, M., Sajavaara, T., & Nielsch, K. (2022). Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors. Advanced Electronic Materials, 8(7), Article 2101334. https://doi.org/10.1002/aelm.202101334
Published in
Advanced Electronic MaterialsAuthors
Date
2022Copyright
© 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbOx dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, Ion/Ioff ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (Ntrap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbOx boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.
...
![showless](/themes/JYX2//images/showless.png)
![showmore](/themes/JYX2//images/showmore.png)
Publisher
Wiley-VCH VerlagISSN Search the Publication Forum
2199-160XKeywords
Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/104537912
Metadata
Show full item recordCollections
Related funder(s)
European CommissionFunding program(s)
Research infrastructures, H2020![](/themes/JYX2/images/funders/eu_logo_thumb.jpg)
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about funding
This work was supported by the Program of Collaborative Research Centers in Germany (Grant No. SFB 1415). The research leading to this result was supported by the RADIATE project under the Grant Agreement No. 824096 from the EU Research and Innovation program HORIZON 2020. A.B. also acknowledges the Alexander von Humboldt-Stiftung for Postdoctoral Research Fellow funding. Special thanks to Dr. Heiko Reith for technical assistance and Ronald Uhlemann for preparation of the illustrations.Open access funding enabled and organized by Projekt DEAL.![showless](/themes/JYX2//images/showless.png)
![showmore](/themes/JYX2//images/showmore.png)
License
Related items
Showing items with similar title or keywords.
-
Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films
Napari, Mari (University of Jyväskylä, 2017)Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these ... -
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Perros, A.; Bosund, M.; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, L.; Huhtio, T.; Lipsanen, H. (American Vacuum Society, 2012)The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled ... -
Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition
Kinnunen, Sami; Lahtinen, Manu; Arstila, Kai; Sajavaara, Timo (MDPI AG, 2021)Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and ... -
Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments
Włodarski, M.; Chodorow, U.; Jóźwiak, S.; Putkonen, M.; Durejko, T.; Sajavaara, T.; Norek, M. (MDPI AG, 2019)The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer ... -
Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
Ahvenniemi, Esko; Akbashev, Andrew R.; Ali, Saima; Bechelany, Mikhael; Berdova, Maria; Boyadjiev, Stefan; Cameron, David C.; Chen, Rong; Chubarov, Mikhail; Cremers, Veronique; Devi, Anjana; Drozd, Viktor; Elnikova, Liliya; Gottardi, Gloria; Grigoras, Kestutis; Hausmann, Dennis M.; Hwang, Cheol Seong; Jen, Shih-Hui; Kallio, Tanja; Kanervo, Jaana; Khmelnitskiy, Ivan; Kim, Do Han; Klibanov, Lev; Koshtyal, Yury; Krause, A. Outi I.; Kuhs, Jakob; Kärkkänen, Irina; Kääriäinen, Marja-Leena; Kääriäinen, Tommi; Lamagna, Luca; Łapicki, Adam A.; Leskelä, Markku; Lipsanen, Harri; Lyytinen, Jussi; Malkov, Anatoly; Malygin, Anatoly; Mennad, Abdelkader; Militzer, Christian; Molarius, Jyrki; Norek, Małgorzata; Özgit-Akgün, Cagla; Panov, Mikhail; Pedersen, Henrik; Piallat, Fabien; Popov, Georgi; Puurunen, Riikka L.; Rampelberg, Geert; Ras, Robin H. A.; Rauwel, Erwan; Roozeboom, Fred; Sajavaara, Timo; Salami, Hossein; Savin, Hele; Schneider, Nathanaelle; Seidel, Thomas E.; Sundqvist, Jonas; Suyatin, Dmitry B.; Törndahl, Tobias; van Ommen, J. Ruud; Wiemer, Claudia; Ylivaara, Oili M. E.; Yurkevich, Oksana (AIP Publishing, 2017)Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas–solid reactions, has become the method of choice in semiconductor manufacturing and many other technological ...