Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
| dc.contributor.author | Roed, Ketil | |
| dc.contributor.author | Eriksen, Dag Oistein | |
| dc.contributor.author | Ceccaroli, Bruno | |
| dc.contributor.author | Martinella, Corinna | |
| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Reshanov, Sergey | |
| dc.contributor.author | Massetti, Silvia | |
| dc.date.accessioned | 2022-05-16T09:51:57Z | |
| dc.date.available | 2022-05-16T09:51:57Z | |
| dc.date.issued | 2022 | |
| dc.identifier.citation | Roed, K., Eriksen, D. O., Ceccaroli, B., Martinella, C., Javanainen, A., Reshanov, S., & Massetti, S. (2022). Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation. <i>IEEE Transactions on Nuclear Science</i>, <i>69</i>(7), 1675-1682. <a href="https://doi.org/10.1109/tns.2022.3173061" target="_blank">https://doi.org/10.1109/tns.2022.3173061</a> | |
| dc.identifier.other | CONVID_144288263 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/81077 | |
| dc.description.abstract | The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower LET. Slightly higher reverse bias threshold values for leakage current degradation was also observed compared to previously published work. | en |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
| dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
| dc.rights | CC BY 4.0 | |
| dc.subject.other | Schottky diodes | |
| dc.subject.other | silicon carbide | |
| dc.subject.other | monoisotopic | |
| dc.subject.other | heavy ion irradiation | |
| dc.subject.other | single event effects | |
| dc.subject.other | single event burnout | |
| dc.subject.other | leakage current degradation | |
| dc.title | Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation | |
| dc.type | article | |
| dc.identifier.urn | URN:NBN:fi:jyu-202205162714 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 1675-1682 | |
| dc.relation.issn | 0018-9499 | |
| dc.relation.numberinseries | 7 | |
| dc.relation.volume | 69 | |
| dc.type.version | publishedVersion | |
| dc.rights.copyright | © Authors, 2022 | |
| dc.rights.accesslevel | openAccess | fi |
| dc.subject.yso | diodit | |
| dc.subject.yso | elektroniikkakomponentit | |
| dc.subject.yso | ionisoiva säteily | |
| dc.subject.yso | puolijohteet | |
| dc.subject.yso | säteilyfysiikka | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p13006 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p9652 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p459 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p18256 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| dc.rights.url | https://creativecommons.org/licenses/by/4.0/ | |
| dc.relation.doi | 10.1109/tns.2022.3173061 | |
| jyx.fundinginformation | Electronic Components and Systems for European Leadership (Grant Number: 662322) | |
| dc.type.okm | A1 |
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