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dc.contributor.authorMartinella, C.
dc.contributor.authorNatzke, P.
dc.contributor.authorAlia, R.G.
dc.contributor.authorKadi, Y.
dc.contributor.authorNiskanen, K.
dc.contributor.authorRossi, M.
dc.contributor.authorJaatinen, J.
dc.contributor.authorKettunen, H.
dc.contributor.authorTsibizov, A.
dc.contributor.authorGrossner, U.
dc.contributor.authorJavanainen, A.
dc.date.accessioned2021-12-01T05:49:39Z
dc.date.available2021-12-01T05:49:39Z
dc.date.issued2022
dc.identifier.citationMartinella, C., Natzke, P., Alia, R.G., Kadi, Y., Niskanen, K., Rossi, M., Jaatinen, J., Kettunen, H., Tsibizov, A., Grossner, U., & Javanainen, A. (2022). Heavy-ion induced single event effects and latent damages in SiC power MOSFETs. <i>Microelectronics Reliability</i>, <i>128</i>, Article 114423. <a href="https://doi.org/10.1016/j.microrel.2021.114423" target="_blank">https://doi.org/10.1016/j.microrel.2021.114423</a>
dc.identifier.otherCONVID_102272593
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/78842
dc.description.abstractThe advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and scanning electron microscopy (SEM) were used to investigate the damage site. Finally, a summary of the different types of damage induced by the heavy ion in SiC MOSFETs is given as a function of the ion LET and operational bias.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofseriesMicroelectronics Reliability
dc.rightsCC BY 4.0
dc.subject.otherSiC MOSFETs
dc.subject.otherHeavy-ion
dc.subject.otherLatent damage
dc.subject.otherSEEs
dc.titleHeavy-ion induced single event effects and latent damages in SiC power MOSFETs
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202112015846
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.description.reviewstatuspeerReviewed
dc.relation.issn0026-2714
dc.relation.volume128
dc.type.versionpublishedVersion
dc.rights.copyright© 2021 The Authors. Published by Elsevier Ltd.
dc.rights.accesslevelopenAccessfi
dc.subject.ysosäteilyfysiikka
dc.subject.ysoionisoiva säteily
dc.subject.ysotransistorit
dc.subject.ysopuolijohteet
dc.subject.ysoelektroniikkakomponentit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p459
jyx.subject.urihttp://www.yso.fi/onto/yso/p16104
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p9652
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.1016/j.microrel.2021.114423


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