Mechanisms of Electron-Induced Single Event Latchup

Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Santin, Giovanni; Polo, Cesar Boatella; Virtanen, Ari

doi:10.1109/TNS.2018.2884537

dc.contributor.author	Tali, Maris
dc.contributor.author	Alía, Rubéen García
dc.contributor.author	Brugger, Markus
dc.contributor.author	Ferlet-Cavrois, Veronique
dc.contributor.author	Corsini, Roberto
dc.contributor.author	Farabolini, Wilfrid
dc.contributor.author	Javanainen, Arto
dc.contributor.author	Santin, Giovanni
dc.contributor.author	Polo, Cesar Boatella
dc.contributor.author	Virtanen, Ari
dc.date.accessioned	2019-12-17T11:54:05Z
dc.date.available	2019-12-17T11:54:05Z
dc.date.issued	2019
dc.identifier.citation	Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., Javanainen, A., Santin, G., Polo, C. B., & Virtanen, A. (2019). Mechanisms of Electron-Induced Single Event Latchup. <i>IEEE Transactions on Nuclear Science</i>, <i>66</i>(1), 437-443. <a href="https://doi.org/10.1109/TNS.2018.2884537" target="_blank">https://doi.org/10.1109/TNS.2018.2884537</a>
dc.identifier.other	CONVID_28765299
dc.identifier.other	TUTKAID_79771
dc.identifier.uri	https://jyx.jyu.fi/handle/123456789/66876
dc.description.abstract	In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.	fi
dc.format.mimetype	application/pdf
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartofseries	IEEE Transactions on Nuclear Science
dc.rights	In Copyright
dc.subject.other	säteilyfysiikka	fi
dc.subject.other	elektronit	fi
dc.subject.other	hiukkaskiihdyttimet	fi
dc.subject.other	radiation physics	fi
dc.subject.other	electrons	fi
dc.subject.other	particle accelerators	fi
dc.title	Mechanisms of Electron-Induced Single Event Latchup
dc.type	article
dc.identifier.urn	URN:NBN:fi:jyu-201912135278
dc.contributor.laitos	Fysiikan laitos	fi
dc.contributor.laitos	Department of Physics	en
dc.contributor.oppiaine	Kiihdytinlaboratorio	fi
dc.contributor.oppiaine	Accelerator Laboratory	en
dc.type.uri	http://purl.org/eprint/type/JournalArticle
dc.date.updated	2019-12-13T13:15:21Z
dc.type.coar	http://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatus	peerReviewed
dc.format.pagerange	437-443
dc.relation.issn	0018-9499
dc.relation.numberinseries	1
dc.relation.volume	66
dc.type.version	acceptedVersion
dc.rights.copyright	© 2019 IEEE
dc.rights.accesslevel	openAccess	fi
dc.subject.yso	säteilyfysiikka
dc.subject.yso	elektronit
dc.subject.yso	hiukkaskiihdyttimet
dc.format.content	fulltext
jyx.subject.uri	http://www.yso.fi/onto/yso/p11069
jyx.subject.uri	http://www.yso.fi/onto/yso/p4030
jyx.subject.uri	http://www.yso.fi/onto/yso/p14309
dc.rights.url	http://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi	10.1109/TNS.2018.2884537
dc.type.okm	A1

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Mechanisms of Electron-Induced Single Event Latchup

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Samankaltainen aineisto

Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs ﻿

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams ﻿

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment ﻿

The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance ﻿

Analysis of the photoneutron field near the THz dump of the CLEAR accelerator at CERN with SEU measurements and simulations ﻿

Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance

Analysis of the photoneutron field near the THz dump of the CLEAR accelerator at CERN with SEU measurements and simulations