Analysis of the photoneutron field near the THz dump of the CLEAR accelerator at CERN with SEU measurements and simulations
Lerner, G., Coronetti, A., Kempf, J. M., Garcia Alia, R., Cerutti, F., Prelipcean, D., Cecchetto, M., Gilardi, A., Farabolini, W., & Corsini, R. (2022). Analysis of the photoneutron field near the THz dump of the CLEAR accelerator at CERN with SEU measurements and simulations. IEEE Transactions on Nuclear Science, 69(7), 1541-1548. https://doi.org/10.1109/tns.2022.3157404
Published inIEEE Transactions on Nuclear Science
© 2022 the Authors
We study the radiation environment near the THz dump of the CLEAR electron accelerator at CERN, using FLUKA simulations and Single Event Upset measurements taken with 32 Mbit ISSI SRAM memories. The main focus is on the characterisation of the neutron field, to evaluate its suitability for radiation tests of electronics in comparison with other irradiation facilities. Neutrons at CLEAR are produced via photonuclear reactions, mostly initiated by photons from the electromagnetic cascades that occur when the beam is absorbed by the dump structure. Good agreement is generally found between the measured SEU rates and the expected values obtained from FLUKA simulations and from the known SEU response of the ISSI SRAMs to neutrons, while one position is found to be potentially affected by photon-driven SEUs.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISSN Search the Publication Forum0018-9499
Publication in research information system
MetadataShow full item record
Related funder(s)European Commission
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about fundingThis project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement number 721624.
Showing items with similar title or keywords.
Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams Söderström, Daniel; Kettunen, Heikki; Morana, Adriana; Javanainen, Arto; Ouerdane, Youcef; El Hamzaoui, Hicham; Capoen, Bruno; Bouwmans, Géraud; Bouazaoui, Mohamed; Girard, Sylvain (MDPI AG, 2021)
Mechanisms of Electron-Induced Single Event Latchup Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Santin, Giovanni; Polo, Cesar Boatella; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2019)In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this ...
Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Kastriotou, Maria; Kettunen, Heikki; Santin, Giovanni; Polo, Cesar Boatella; Tsiligiannis, Georgios; Danzeca, Salvatore; Virtanen, Ari (IEEE, 2018)In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs ...
The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment Coronetti, Andrea; Alía, Rubén García; Cecchetto, Matteo; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigné, Frédéric (Institute of Electrical and Electronics Engineers, 2020)The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets ...
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi (IEEE, 2021)This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under ...