Mechanisms of Electron-Induced Single Event Latchup
Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., Javanainen, A., Santin, G., Polo, C. B., & Virtanen, A. (2019). Mechanisms of Electron-Induced Single Event Latchup. IEEE Transactions on Nuclear Science, 66(1), 437-443. https://doi.org/10.1109/TNS.2018.2884537
Published inIEEE Transactions on Nuclear Science
© 2019 IEEE
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
PublisherInstitute of Electrical and Electronics Engineers
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Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Kastriotou, Maria; Kettunen, Heikki; Santin, Giovanni; Polo, Cesar Boatella; Tsiligiannis, Georgios; Danzeca, Salvatore; Virtanen, Ari (IEEE, 2018)In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs ...
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Söderström, Daniel; Matana Luza, Lucas; Kettunen, Heikki; Javanainen, Arto; Farabolini, Wilfrid; Gilardi, Antonio; Coronetti, Andrea; Poivey, Christian; Dilillo, Luigi (Institute of Electrical and Electronics Engineers (IEEE), 2021)This study investigates the response of synchronous dynamic random access memories to energetic electrons, and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with ...
The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance Coronetti, Andrea; Alia Garcia, Ruben; Cerutti, Francesco; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigne, Frederic (Institute of Electrical and Electronics Engineers (IEEE), 2021)Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event ...
Coronetti, Andrea; Alía, Rubén García; Cecchetto, Matteo; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigné, Frédéric (Institute of Electrical and Electronics Engineers, 2020)The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets ...