Mechanisms of Electron-Induced Single Event Latchup
Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., Javanainen, A., Santin, G., Polo, C. B., & Virtanen, A. (2019). Mechanisms of Electron-Induced Single Event Latchup. IEEE Transactions on Nuclear Science, 66(1), 437-443. https://doi.org/10.1109/TNS.2018.2884537
Published inIEEE Transactions on Nuclear Science
© 2019 IEEE
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
PublisherInstitute of Electrical and Electronics Engineers
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Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Kastriotou, Maria; Kettunen, Heikki; Santin, Giovanni; Polo, Cesar Boatella; Tsiligiannis, Georgios; Danzeca, Salvatore; Virtanen, Ari (IEEE, 2018)In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs ...
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