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dc.contributor.authorAndreou, Charalambos M.
dc.contributor.authorGonzález-Castaño, Diego Miguel
dc.contributor.authorGerardin, Simone
dc.contributor.authorBagatin, Marta
dc.contributor.authorRodriguez, Faustino Gómez
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorProkofiev, Alexander V.
dc.contributor.authorJavanainen, Arto
dc.contributor.authorVirtanen, Ari
dc.contributor.authorLiberali, Valentino
dc.contributor.authorCalligaro, Cristiano
dc.contributor.authorNahmad, Daniel
dc.contributor.authorGeorgiou, Julius
dc.date.accessioned2019-05-29T12:14:17Z
dc.date.available2019-05-29T12:14:17Z
dc.date.issued2019fi
dc.identifier.citationAndreou, C. M., González-Castaño, D. M., Gerardin, S., Bagatin, M., Rodriguez, F. G., Paccagnella, A., . . . Georgiou, J. (2019). Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions. <em>Electronics</em>, 8 (5), 562. <a href="https://doi.org/10.3390/electronics8050562">doi:10.3390/electronics8050562</a>fi
dc.identifier.otherTUTKAID_81531
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/64279
dc.description.abstractThe radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherMDPI AG
dc.relation.ispartofseriesElectronics
dc.rightsCC BY 4.0
dc.subject.othersäteilyfysiikkafi
dc.subject.othermikroelektroniikkafi
dc.subject.othermikropiiritfi
dc.subject.otherionisoiva säteilyfi
dc.subject.othergammasäteilyfi
dc.subject.otherröntgensäteilyfi
dc.subject.otherhiukkassäteilyfi
dc.subject.otheranalog single-event transient (ASET)fi
dc.subject.otherbandgap voltage reference (BGR)fi
dc.subject.otherCMOS analog integrated circuitsfi
dc.subject.othergamma-raysfi
dc.subject.otherheavy-ionsfi
dc.subject.otherionizationfi
dc.subject.otherprotonsfi
dc.subject.otherradiation hardening by design (RHBD)fi
dc.subject.otherreference circuitsfi
dc.subject.othersingle-event effects (SEE)fi
dc.subject.otherspace electronicsfi
dc.subject.othertotal ionization dose (TID)fi
dc.subject.othervoltage referencefi
dc.subject.otherX-raysfi
dc.titleLow-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ionsfi
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201905292880
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikka
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2019-05-29T09:15:33Z
dc.description.reviewstatuspeerReviewed
dc.relation.issn2079-9292
dc.relation.numberinseries5
dc.relation.volume8
dc.type.versionpublishedVersion
dc.rights.copyright© authors, 2019.
dc.rights.accesslevelopenAccessfi
dc.format.contentfulltext
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.3390/electronics8050562


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