Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
| dc.contributor.author | Bosser, Alexandre | |
| dc.contributor.author | Gupta, V. | |
| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Tsiligiannis, G. | |
| dc.contributor.author | LaLumondiere, S. D. | |
| dc.contributor.author | Brewe, D. | |
| dc.contributor.author | Ferlet-Cavrois, V. | |
| dc.contributor.author | Puchner, H. | |
| dc.contributor.author | Kettunen, Heikki | |
| dc.contributor.author | Gil, T. | |
| dc.contributor.author | Wrobel, F. | |
| dc.contributor.author | Saigné, F. | |
| dc.contributor.author | Virtanen, Ari | |
| dc.contributor.author | Dilillo, L. | |
| dc.date.accessioned | 2018-08-22T12:42:50Z | |
| dc.date.available | 2020-01-26T22:35:29Z | |
| dc.date.issued | 2018 | |
| dc.identifier.citation | Bosser, A., Gupta, V., Javanainen, A., Tsiligiannis, G., LaLumondiere, S. D., Brewe, D., Ferlet-Cavrois, V., Puchner, H., Kettunen, H., Gil, T., Wrobel, F., Saigné, F., Virtanen, A., & Dilillo, L. (2018). Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory. <i>IEEE Transactions on Nuclear Science</i>, <i>65</i>(8), 1708-1714. <a href="https://doi.org/10.1109/TNS.2018.2797543" target="_blank">https://doi.org/10.1109/TNS.2018.2797543</a> | |
| dc.identifier.other | CONVID_27873875 | |
| dc.identifier.other | TUTKAID_76660 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/59316 | |
| dc.description.abstract | This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. | fi |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | Institute of Electrical and Electronics Engineers | |
| dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
| dc.rights | In Copyright | |
| dc.subject.other | single-event effect | |
| dc.subject.other | single-event upset | |
| dc.subject.other | SEFI | |
| dc.subject.other | FRAM | |
| dc.subject.other | X-ray | |
| dc.subject.other | heavy ion | |
| dc.subject.other | static test | |
| dc.subject.other | dynamic test | |
| dc.title | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory | |
| dc.type | article | |
| dc.identifier.urn | URN:NBN:fi:jyu-201808203863 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.date.updated | 2018-08-20T09:15:04Z | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 1708-1714 | |
| dc.relation.issn | 0018-9499 | |
| dc.relation.numberinseries | 8 | |
| dc.relation.volume | 65 | |
| dc.type.version | acceptedVersion | |
| dc.rights.copyright | © 2018 IEEE | |
| dc.rights.accesslevel | openAccess | fi |
| dc.subject.yso | säteilyfysiikka | |
| dc.subject.yso | muistit (tietotekniikka) | |
| dc.subject.yso | käyttömuistit | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p12658 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p15250 | |
| dc.rights.url | http://rightsstatements.org/page/InC/1.0/?language=en | |
| dc.relation.doi | 10.1109/TNS.2018.2797543 | |
| dc.type.okm | A1 |
Aineistoon kuuluvat tiedostot
Aineisto kuuluu seuraaviin kokoelmiin
Ellei muuten mainita, aineiston lisenssi on In Copyright