Failure Estimates for SiC Power MOSFETs in Space Electronics
| dc.contributor.author | Galloway, Kenneth F. | |
| dc.contributor.author | Witulski, Arthur F. | |
| dc.contributor.author | Schrimpf, Ronald D. | |
| dc.contributor.author | Sternberg, Andrew L. | |
| dc.contributor.author | Ball, Dennis R. | |
| dc.contributor.author | Javanainen, Arto | |
| dc.contributor.author | Reed, Robert A. | |
| dc.contributor.author | Sierawski, Brian D. | |
| dc.contributor.author | Lauenstein, Jean-Marie | |
| dc.date.accessioned | 2018-07-03T09:43:16Z | |
| dc.date.available | 2018-07-03T09:43:16Z | |
| dc.date.issued | 2018 | |
| dc.identifier.citation | Galloway, K. F., Witulski, A. F., Schrimpf, R. D., Sternberg, A. L., Ball, D. R., Javanainen, A., Reed, R. A., Sierawski, B. D., & Lauenstein, J.-M. (2018). Failure Estimates for SiC Power MOSFETs in Space Electronics. <i>Aerospace</i>, <i>5</i>(3), 67. <a href="https://doi.org/10.3390/aerospace5030067" target="_blank">https://doi.org/10.3390/aerospace5030067</a> | |
| dc.identifier.other | CONVID_28138386 | |
| dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/58830 | |
| dc.description.abstract | Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. | fi |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | |
| dc.publisher | MDPI | |
| dc.relation.ispartofseries | Aerospace | |
| dc.rights | CC BY 4.0 | |
| dc.subject.other | single event effects | |
| dc.subject.other | heavy ions | |
| dc.subject.other | silicon carbide | |
| dc.subject.other | single-event burnout | |
| dc.subject.other | power devices | |
| dc.subject.other | power MOSFETs | |
| dc.subject.other | reliability | |
| dc.subject.other | failure rates | |
| dc.title | Failure Estimates for SiC Power MOSFETs in Space Electronics | |
| dc.type | research article | |
| dc.identifier.urn | URN:NBN:fi:jyu-201806283386 | |
| dc.contributor.laitos | Fysiikan laitos | fi |
| dc.contributor.laitos | Department of Physics | en |
| dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
| dc.contributor.oppiaine | Accelerator Laboratory | en |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
| dc.date.updated | 2018-06-28T09:15:09Z | |
| dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.description.reviewstatus | peerReviewed | |
| dc.format.pagerange | 67 | |
| dc.relation.issn | 2226-4310 | |
| dc.relation.numberinseries | 3 | |
| dc.relation.volume | 5 | |
| dc.type.version | publishedVersion | |
| dc.rights.copyright | © 2018 by the authors. Licensee MDPI, Basel, Switzerland. | |
| dc.rights.accesslevel | openAccess | fi |
| dc.type.publication | article | |
| dc.subject.yso | säteilyfysiikka | |
| dc.subject.yso | transistorit | |
| dc.subject.yso | avaruustekniikka | |
| dc.format.content | fulltext | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p11069 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p16104 | |
| jyx.subject.uri | http://www.yso.fi/onto/yso/p17376 | |
| dc.rights.url | https://creativecommons.org/licenses/by/4.0/ | |
| dc.relation.doi | 10.3390/aerospace5030067 | |
| dc.type.okm | A1 |
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