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Failure Estimates for SiC Power MOSFETs in Space Electronics

dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorWitulski, Arthur F.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorSternberg, Andrew L.
dc.contributor.authorBall, Dennis R.
dc.contributor.authorJavanainen, Arto
dc.contributor.authorReed, Robert A.
dc.contributor.authorSierawski, Brian D.
dc.contributor.authorLauenstein, Jean-Marie
dc.date.accessioned2018-07-03T09:43:16Z
dc.date.available2018-07-03T09:43:16Z
dc.date.issued2018
dc.identifier.citationGalloway, K. F., Witulski, A. F., Schrimpf, R. D., Sternberg, A. L., Ball, D. R., Javanainen, A., Reed, R. A., Sierawski, B. D., & Lauenstein, J.-M. (2018). Failure Estimates for SiC Power MOSFETs in Space Electronics. <i>Aerospace</i>, <i>5</i>(3), 67. <a href="https://doi.org/10.3390/aerospace5030067" target="_blank">https://doi.org/10.3390/aerospace5030067</a>
dc.identifier.otherCONVID_28138386
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/58830
dc.description.abstractSilicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherMDPI
dc.relation.ispartofseriesAerospace
dc.rightsCC BY 4.0
dc.subject.othersingle event effects
dc.subject.otherheavy ions
dc.subject.othersilicon carbide
dc.subject.othersingle-event burnout
dc.subject.otherpower devices
dc.subject.otherpower MOSFETs
dc.subject.otherreliability
dc.subject.otherfailure rates
dc.titleFailure Estimates for SiC Power MOSFETs in Space Electronics
dc.typeresearch article
dc.identifier.urnURN:NBN:fi:jyu-201806283386
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-06-28T09:15:09Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange67
dc.relation.issn2226-4310
dc.relation.numberinseries3
dc.relation.volume5
dc.type.versionpublishedVersion
dc.rights.copyright© 2018 by the authors. Licensee MDPI, Basel, Switzerland.
dc.rights.accesslevelopenAccessfi
dc.type.publicationarticle
dc.subject.ysosäteilyfysiikka
dc.subject.ysotransistorit
dc.subject.ysoavaruustekniikka
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p11069
jyx.subject.urihttp://www.yso.fi/onto/yso/p16104
jyx.subject.urihttp://www.yso.fi/onto/yso/p17376
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.3390/aerospace5030067
dc.type.okmA1


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