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dc.contributor.authorMentel, Kamila K.
dc.contributor.authorEmelianov, Aleksei V.
dc.contributor.authorPhilip, Anish
dc.contributor.authorJohansson, Andreas
dc.contributor.authorKarppinen, Maarit
dc.contributor.authorPettersson, Mika
dc.date.accessioned2022-09-14T07:03:48Z
dc.date.available2022-09-14T07:03:48Z
dc.date.issued2022
dc.identifier.citationMentel, K. K., Emelianov, A. V., Philip, A., Johansson, A., Karppinen, M., & Pettersson, M. (2022). Area‐Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation. <i>Advanced Materials Interfaces</i>, <i>9</i>(29), Article 2201110. <a href="https://doi.org/10.1002/admi.202201110" target="_blank">https://doi.org/10.1002/admi.202201110</a>
dc.identifier.otherCONVID_155941654
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/83243
dc.description.abstractArea-selective atomic layer deposition (ALD) is a promising “bottom-up” alternative to current nanopatterning techniques. While it has been successfully implemented in traditional microelectronic processes, selective nucleation of ALD on 2D materials has so far remained an unsolved challenge. In this article, a precise control of the selective deposition of ZnO on graphene at low temperatures (<250 °C) is demonstrated. Maskless femtosecond laser writing is used to locally activate predefined surface areas (down to 300 nm) by functionalizing graphene to achieve excellent ALD selectivity (up to 100%) in these regions for 6-nm-thick ZnO films. The intrinsic conductive properties of graphene can be restored by thermal annealing at low temperature (300 °C) without destroying the deposited ZnO patterns. As the graphene layer can be transferred onto other material surfaces, the present patterning technique opens new attractive ways for various applications in which the functionalized graphene is utilized as a template layer for selective deposition of desired materials.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherWiley
dc.relation.ispartofseriesAdvanced Materials Interfaces
dc.rightsCC BY-NC 4.0
dc.subject.otherArea-selective atomic layer deposition
dc.subject.othernanopatterning
dc.titleArea‐Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202209144589
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosKemian laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.laitosDepartment of Chemistryen
dc.contributor.oppiaineFysikaalinen kemiafi
dc.contributor.oppiaineNanoscience Centerfi
dc.contributor.oppiainePhysical Chemistryen
dc.contributor.oppiaineNanoscience Centeren
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn2196-7350
dc.relation.numberinseries29
dc.relation.volume9
dc.type.versionpublishedVersion
dc.rights.copyright© 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
dc.rights.accesslevelopenAccessfi
dc.relation.grantnumber311330
dc.relation.grantnumber4829-306F6
dc.subject.ysografeeni
dc.subject.ysonanotekniikka
dc.subject.ysoatomikerroskasvatus
dc.subject.ysonanorakenteet
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p24483
jyx.subject.urihttp://www.yso.fi/onto/yso/p11463
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
jyx.subject.urihttp://www.yso.fi/onto/yso/p25315
dc.rights.urlhttps://creativecommons.org/licenses/by-nc/4.0/
dc.relation.doi10.1002/admi.202201110
dc.relation.funderResearch Council of Finlanden
dc.relation.funderJane and Aatos Erkko Foundationen
dc.relation.funderSuomen Akatemiafi
dc.relation.funderJane ja Aatos Erkon säätiöfi
jyx.fundingprogramAcademy Project, AoFen
jyx.fundingprogramFoundationen
jyx.fundingprogramAkatemiahanke, SAfi
jyx.fundingprogramSäätiöfi
jyx.fundinginformationThe authors acknowledge fundings from the Academy of Finland (Flagship PREIN and grant no. 311330), and from the Jane and Aatos Erkko Foundation.
dc.type.okmA1


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