Proton Direct Ionization in Sub-Micron Technologies : Numerical Method for RPP Parameter Extraction
Lüdeke, S., & Javanainen, A. (2022). Proton Direct Ionization in Sub-Micron Technologies : Numerical Method for RPP Parameter Extraction. IEEE Transactions on Nuclear Science, 69(3), 254-263. https://doi.org/10.1109/tns.2022.3147592
Published in
IEEE Transactions on Nuclear ScienceDate
2022Copyright
© IEEE, 2022
This work introduces a numerical method to iteratively extract parameters of a rectangular parallelepiped (RPP) sensitive volume (SV) from experimental proton direct ionization SEU data. The method combines two separate numerical models. The first model estimates the average LET values for energetic ions, including protons and also heavy ions, in elemental solid targets. The second model describes the statistical variance in the energy deposition events of projectile-induced primary ionization within a RPP shaped target volume. To benchmark the method, simulated cross-section values based on RPP parameters derived with this method are compared with literature data from four SRAM devices. The RPP geometries determined by this method reproduced the experimental cross-section values in the literature with good accuracy, therefore showing that this method can be used to reliably and quickly determine the RPP parameters for SVs in memories sensitive to proton direct ionization (PDI). The method is currently strictly limited to direct ionization effects, i.e. not taking into account any nuclear reaction mechanisms, and elemental materials due to the underlying models’ definitions.
...
Publisher
Institute of Electrical and Electronics Engineers (IEEE)ISSN Search the Publication Forum
0018-9499Keywords
Dataset(s) related to the publication
Lüdeke, Sascha; Javanainen, Arto. (2021). Semi-empirical parameters for electronic stopping force model. Relative differences between experimental data and various stopping models (this model, SRIM2013, DPASS). V. 2.12.2021. University of Jyväskylä. https://doi.org/10.17011/jyx/dataset/78898. https://urn.fi/URN:NBN:fi:jyu-202112085888Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/104061542
Metadata
Show full item recordCollections
Related funder(s)
European Commission; European Space AgencyFunding program(s)
MSCA Innovative Training Networks (ITN); Others
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about funding
This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Programme under the Marie Sklodowska-Curie Grant Agreement 721624, in part by Deutsche Forschungs-gemeinschaft (DFG) through its Major Research Instrumentation Programme under Grant INST 184/157-1 FUGG, and in part by the Ministry of Science and Culture (MWK) of the Lower Saxony State.License
Related items
Showing items with similar title or keywords.
-
Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling
Lüdeke, Sascha; Cardenas, Gabriel Duran; Hajdas, Wojtek; Jaatinen, Jukka; Kettunen, Heikki; Poivey, Christian; Rossi, Mikko; Tanios, Bendy; Vogiatzi Stergiani, Marina; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were ... -
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
Coronetti, Andrea; Garcìa Alìa, Rubén; Wang, Jialei; Tali, Maris; Cecchetto, Matteo; Cazzaniga, Carlo; Javanainen, Arto; Saigné, Frédéric; Leroux, Paul (IEEE, 2021)Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for ... -
Proton direct ionization upsets at tens of MeV
Coronetti, Andrea; Alia, Ruben Garcia; Lucsanyi, David; Wang, Jialei; Saigne, Frederic; Javanainen, Arto; Leroux, Paul; Prinzie, Jeffrey (Institute of Electrical and Electronics Engineers (IEEE), 2023)Experimental mono-energetic proton single-event upset (SEU) cross-sections of a 65 nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at ... -
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
Andreou, Charalambos M.; González-Castaño, Diego Miguel; Gerardin, Simone; Bagatin, Marta; Rodriguez, Faustino Gómez; Paccagnella, Alessandro; Prokofiev, Alexander V.; Javanainen, Arto; Virtanen, Ari; Liberali, Valentino; Calligaro, Cristiano; Nahmad, Daniel; Georgiou, Julius (MDPI AG, 2019)The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced ... -
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
Niskanen, Kimmo; Kettunen, Heikki; Söderström, Daniel; Rossi, Mikko; Jaatinen, Jukka; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) ...