Showing items with similar title or keywords.

• Investigate the radiation response of Heterojunction Bipolar Transistors : impact of X-ray irradiation on DC and Low Frequency Noise characteristics 

  Ayenew, Adebabay Belie (2023)

  SiGe HBTs have emerged to meet the burgeoning demand of wireless communication and high-speed niche applications at a compelling cost advantage. The high integration capability of SiGe technology with CMOS provides a ...

• A Theory of electrical circuits with resistively coupled distributed structures : Delay time predicting 

  Marinov, Corneliu A.; Neittaanmäki, Pekka (IEEE, 1988)

  This paper deals with qualitative properties ( existence, uniqueness, and especially, stability) and numerical solution of a circuit consisting of a resistive multiport with r-c-g "exactly modeled" distributed elements ...

• A theory of electrical circuits with resistively coupled distributed systems 

  Marinov, Corneliu A.; Neittaanmäki, Pekka (IEEE, 1988)

  Qualitative properties (existence, uniqueness, and especially, stability) and numerical solution of a circuit consisting of a resistive multiport with r-c-g exactly modeled distributed elements connected to its terminals, ...

• Global delay time for general distributed networks with applications to timing analysis of digital MOS integrated circuits 

  Marinov, Corneliu A.; Neittaanmäki, Pekka (Boole Press, 1989)

  We consider here a general nerwork composed by n‐distributed parameters lines (with telegraph‐equations models) and m‐capacitors, all connected by a resistive multiport. An asymptotic stability property drives us to define ...

• A FE-splitting-up method and its application to distributed parameter in parabolic equations 

  Tai, Xue-Cheng; Neittaanmäki, Pekka (North-Holland, 1990)