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dc.contributor.authorTorgovkin, Andrii
dc.contributor.authorChaudhuri, Saumyadip
dc.contributor.authorRuhtinas, Aki
dc.contributor.authorLahtinen, Manu
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMaasilta, Ilari
dc.date.accessioned2018-04-17T10:10:28Z
dc.date.available2019-03-19T22:35:29Z
dc.date.issued2018
dc.identifier.citationTorgovkin, A., Chaudhuri, S., Ruhtinas, A., Lahtinen, M., Sajavaara, T., & Maasilta, I. (2018). High-quality superconducting titanium nitride thin film growth using infra-red pulsed laser deposition. <i>Superconductor Science and Technology</i>, <i>31</i>, Article 055017. <a href="https://doi.org/10.1088/1361-6668/aab7d6" target="_blank">https://doi.org/10.1088/1361-6668/aab7d6</a>
dc.identifier.otherCONVID_27959775
dc.identifier.otherTUTKAID_77121
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/57643
dc.description.abstractSuperconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ~17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherIOP Publishing
dc.relation.ispartofseriesSuperconductor Science and Technology
dc.subject.othertitanium nitride
dc.subject.otherpulsed laser deposition (PLD)
dc.subject.otherelemental analysis
dc.titleHigh-quality superconducting titanium nitride thin film growth using infra-red pulsed laser deposition
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201804162087
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosKemian laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.laitosDepartment of Chemistryen
dc.contributor.oppiaineNanoscience Centerfi
dc.contributor.oppiaineNanoscience Centeren
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-04-16T12:15:06Z
dc.description.reviewstatuspeerReviewed
dc.relation.issn0953-2048
dc.relation.numberinseries0
dc.relation.volume31
dc.type.versionacceptedVersion
dc.rights.copyright© 2018 IOP Publishing Ltd. This is a final draft version of an article whose final and definitive form has been published by IOP Publishing Ltd. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.relation.grantnumber298667
dc.subject.ysoalkuaineanalyysi
dc.subject.ysotitaani
dc.subject.ysoohutkalvot
dc.subject.ysosuprajohteet
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p10172
jyx.subject.urihttp://www.yso.fi/onto/yso/p18969
jyx.subject.urihttp://www.yso.fi/onto/yso/p16644
jyx.subject.urihttp://www.yso.fi/onto/yso/p9946
dc.relation.doi10.1088/1361-6668/aab7d6
dc.relation.funderSuomen Akatemiafi
dc.relation.funderAcademy of Finlanden
jyx.fundingprogramAkatemiahanke, SAfi
jyx.fundingprogramAcademy Project, AoFen
jyx.fundinginformationThis research has been supported by Academy of Finland projects number 260880 and 298667 and Academy of Finland Center of Excellence in Nuclear and Accelerator Based Physics (Ref. 251353). We thank M R J Palosaari and K M Kinnunen for assistance with low temperature measurements.


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