The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges
Napari, M., Tarvainen, O., Kinnunen, S., Arstila, K., Julin, J., Fjellvåg, Ø. S., . . . Sajavaara, T. (2017). The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges. Journal of Physics D: Applied Physics, 50 (9), 095201. doi:10.1088/1361-6463/aa59b3
Published inJournal of Physics D: Applied Physics
© 2017 IOP Publishing Ltd. This is a final draft version of an article whose final and definitive form has been published by IOP. Published in this repository with the kind permission of the publisher.
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coecient analysis of the relevant processes were used to connect the detected modes to the a and g modes of the CCP discharge. To investigate the e↵ect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the g mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications.