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dc.contributor.authorPerros, A.
dc.contributor.authorBosund, M.
dc.contributor.authorSajavaara, Timo
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSainiemi, L.
dc.contributor.authorHuhtio, T.
dc.contributor.authorLipsanen, H.
dc.date.accessioned2016-09-19T05:59:16Z
dc.date.available2016-09-19T05:59:16Z
dc.date.issued2012
dc.identifier.citationPerros, A., Bosund, M., Sajavaara, T., Laitinen, M., Sainiemi, L., Huhtio, T., & Lipsanen, H. (2012). Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. <i>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</i>, <i>30</i>(1), 11504. <a href="https://doi.org/10.1116/1.3664306" target="_blank">https://doi.org/10.1116/1.3664306</a>
dc.identifier.otherCONVID_22310938
dc.identifier.otherTUTKAID_55675
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/51396
dc.description.abstractThe plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SFþ x and Oþ chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF6 based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.
dc.language.isoeng
dc.publisherAmerican Vacuum Society
dc.relation.ispartofseriesJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
dc.subject.otherplasmakasvatus
dc.subject.otherplasma deposition
dc.titlePlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201601211239
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiainePhysicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2016-01-21T10:15:53Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange11504
dc.relation.issn0734-2101
dc.relation.numberinseries1
dc.relation.volume30
dc.type.versionpublishedVersion
dc.rights.copyright© 2012 American Vacuum Society. Published by AIP. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.subject.ysoatomikerroskasvatus
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
dc.relation.doi10.1116/1.3664306
dc.type.okmA1


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