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dc.contributor.authorNapari, Mari
dc.contributor.authorMalm, Jari
dc.contributor.authorLehto, Roope
dc.contributor.authorJulin, Jaakko
dc.contributor.authorArstila, Kai
dc.contributor.authorSajavaara, Timo
dc.contributor.authorLahtinen, Manu
dc.date.accessioned2014-12-12T08:24:59Z
dc.date.available2014-12-12T08:24:59Z
dc.date.issued2015
dc.identifier.citationNapari, M., Malm, J., Lehto, R., Julin, J., Arstila, K., Sajavaara, T., & Lahtinen, M. (2015). Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition. <i>Journal of Vacuum Science and Technology A</i>, <i>33</i>(1), Article 01A128. <a href="https://doi.org/10.1116/1.4902326" target="_blank">https://doi.org/10.1116/1.4902326</a>
dc.identifier.otherCONVID_24041510
dc.identifier.otherTUTKAID_64021
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/44857
dc.description.abstractZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al 2O3 seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJournal of Vacuum Science and Technology A
dc.subject.otherzinc oxide films
dc.subject.otherthin film growth
dc.titleNucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201412113481
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosKemian laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.laitosDepartment of Chemistryen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiaineEpäorgaaninen ja analyyttinen kemiafi
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiainePhysicsen
dc.contributor.oppiaineInorganic and Analytical Chemistryen
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2014-12-11T16:30:03Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn0734-2101
dc.relation.numberinseries1
dc.relation.volume33
dc.type.versionpublishedVersion
dc.rights.copyright© 2014 American Vacuum Society
dc.rights.accesslevelopenAccessfi
dc.relation.doi10.1116/1.4902326
dc.type.okmA1


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