Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
Napari, M., Malm, J., Lehto, R., Julin, J., Arstila, K., Sajavaara, T., & Lahtinen, M. (2015). Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition. Journal of Vacuum Science and Technology A, 33(1), Article 01A128. https://doi.org/10.1116/1.4902326
Julkaistu sarjassa
Journal of Vacuum Science and Technology ATekijät
Päivämäärä
2015Oppiaine
FysiikkaEpäorgaaninen ja analyyttinen kemiaKiihdytinlaboratorioPhysicsInorganic and Analytical ChemistryAccelerator LaboratoryTekijänoikeudet
© 2014 American Vacuum Society
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al 2O3 seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.
...
![showless](/themes/JYX2//images/showless.png)
![showmore](/themes/JYX2//images/showmore.png)
Julkaisija
American Institute of PhysicsISSN Hae Julkaisufoorumista
0734-2101Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/24041510
Metadata
Näytä kaikki kuvailutiedotKokoelmat
Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
-
Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films
Napari, Mari (University of Jyväskylä, 2017)Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these ... -
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
Yang, Jun; Bahrami, Amin; Ding, Xingwei; Zhao, Panpan; He, Shiyang; Lehmann, Sebastian; Laitinen, Mikko; Julin, Jaakko; Kivekäs, Mikko; Sajavaara, Timo; Nielsch, Kornelius (Wiley-VCH Verlag, 2022)SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is ... -
Low-temperature Molecular Layer Deposition Using Monofunctional Aromatic Precursors and Ozone-based Ring Opening Reactions
Svärd, Laura; Putkonen, Matti; Kenttä, Eija; Sajavaara, Timo; Krahl, Fabian; Karppinen, Maarit; Kerckhove, Kevin Van de; Detavernier, Christophe; Simell, Pekka (American Chemical Society, 2017)Molecular layer deposition (MLD) is an increasingly used deposition technique for producing thin coatings consisting of purely organic or hybrid inorganic–organic materials. When organic materials are prepared, low deposition ... -
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Perros, A.; Bosund, M.; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, L.; Huhtio, T.; Lipsanen, H. (American Vacuum Society, 2012)The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled ... -
Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configuration
Napari, Mari; Lahtinen, Manu; Veselov, Alexey; Julin, Jaakko; Østreng, Erik; Sajavaara, Timo (Elsevier Sequoia, 2017)Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma ...
Ellei toisin mainittu, julkisesti saatavilla olevia JYX-metatietoja (poislukien tiivistelmät) saa vapaasti uudelleenkäyttää CC0-lisenssillä.