Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
Chaudhuri, S., & Maasilta, I. (2014). Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions. Applied Physics Letters, 104(12), Article 122601. https://doi.org/10.1063/1.4869563
Published in
Applied Physics LettersDate
2014Copyright
© 2014 AIP Publishing LLC. This is an article whose final and definitive form has been published by AIP Publishing LLC.
We report the development of superconducting tantalum nitride (TaN
x
) normal
metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both
AlO
x
and TaO
x
(Cu-AlO
x
-Al-TaN
x
and Cu-TaO
x
-TaN
x
), with both devices exhibiting temperature
dependent current-voltage characteristics which follow the simple one-particle tunneling model.
The superconducting gap follows a BCS type temperature dependence, rendering these devices
suitable for sensitive thermometry and bolometry from the superconducting transition temperature
T
C
of the TaN
x
film at
5 K down to
0.5 K. Numerical simulations were also performed to
predict how junction parameters should be tuned to achieve electronic cooling at temperatures
above 1 K.
V
C
2014 AIP Publishing LLC
.
Publisher
American Institute of PhysicsISSN Search the Publication Forum
0003-6951
Original source
http://scitation.aip.org/content/aip/journal/apl/104/12/10.1063/1.4869563Publication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/23715545
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Except where otherwise noted, this item's license is described as © 2014 AIP Publishing LLC. This is an article whose final and definitive form has been published by AIP Publishing LLC.
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