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dc.contributor.authorYlivaara, Oili M. E.
dc.contributor.authorLangner, Andreas
dc.contributor.authorEk, Satu
dc.contributor.authorMalm, Jari
dc.contributor.authorJulin, Jaakko
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorAli, Saima
dc.contributor.authorSintonen, Sakari
dc.contributor.authorLipsanen, Harri
dc.contributor.authorSajavaara, Timo
dc.contributor.authorPuurunen, Riikka L.
dc.date.accessioned2022-11-30T09:29:03Z
dc.date.available2022-11-30T09:29:03Z
dc.date.issued2022
dc.identifier.citationYlivaara, O. M. E., Langner, A., Ek, S., Malm, J., Julin, J., Laitinen, M., Ali, S., Sintonen, S., Lipsanen, H., Sajavaara, T., & Puurunen, R. L. (2022). Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition. <i>Journal of Vacuum Science and Technology A</i>, <i>40</i>(6), Article 062414. <a href="https://doi.org/10.1116/6.0002095" target="_blank">https://doi.org/10.1116/6.0002095</a>
dc.identifier.otherCONVID_160397481
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/84157
dc.description.abstractIn microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues at device level or even device failure. In this work, residual stress and the role of intrinsic stress in ALD Al2O3 films grown from Me3Al and H2O, O3, or O2 (plasma ALD) were studied via post-ALD thermal processing. Thermal expansion coefficient was determined using thermal cycling and the double substrate method. For some samples, post-ALD thermal annealing was done in nitrogen at 300, 450, 700, or 900 °C. Selected samples were also studied for crystallinity, composition, and optical properties. Samples that were thermally annealed at 900 °C had increased residual stress value (1400–1600 MPa) upon formation of denser Al2O3 phase. The thermal expansion coefficient varied somewhat between Al2O3 made using different oxygen precursors. For thermal-Al2O3, intrinsic stress decreased with increasing growth temperature. ALD Al2O3 grown with plasma process had the lowest intrinsic stress. The results show that ALD Al2O3 grown at 200 and 300 °C is suitable for applications, where films are exposed to post-ALD thermal processing even at temperature of 700 °C without a major change in optical properties or residual stress.en
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherAmerican Vacuum Society
dc.relation.ispartofseriesJournal of Vacuum Science and Technology A
dc.rightsCC BY 4.0
dc.subject.otheratomic layer deposition
dc.subject.otherALD
dc.titleThermomechanical properties of aluminum oxide thin films made by atomic layer deposition
dc.typeresearch article
dc.identifier.urnURN:NBN:fi:jyu-202211305429
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiainePhysicsen
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn0734-2101
dc.relation.numberinseries6
dc.relation.volume40
dc.type.versionpublishedVersion
dc.rights.copyright© 2022 Author(s).
dc.rights.accesslevelopenAccessfi
dc.type.publicationarticle
dc.subject.ysoohutkalvot
dc.subject.ysoatomikerroskasvatus
dc.subject.ysolämpökäsittely
dc.subject.ysooptiset ominaisuudet
dc.subject.ysoalumiinioksidi
dc.subject.ysojäännösjännitykset
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p16644
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
jyx.subject.urihttp://www.yso.fi/onto/yso/p5092
jyx.subject.urihttp://www.yso.fi/onto/yso/p25870
jyx.subject.urihttp://www.yso.fi/onto/yso/p38971
jyx.subject.urihttp://www.yso.fi/onto/yso/p38918
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.datasethttp://doi.org/10.5281/zenodo.7105571
dc.relation.doi10.1116/6.0002095
jyx.fundinginformationThis work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland.
dc.type.okmA1


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