Single-Event Radiation Effects in Hardened and State-of-the-art Components for Space and High- Energy Accelerator Applications

Abstract

In this work, the physical mechanisms of electron-induced single-event effects have been studied. Simulations using Monte Carlo codes such as FLUKA have been performed to study in more detailed the mechanisms by which electrons deposit charge in the sensitive volumes in modern electronic devices. Experimental results from several irradiation campaigns at facilities such as VESPER at CERN in Geneva, Switzerland, and RADEF in Jyväskylä, Finland have shown that electron-induced single-event effects are possible. Furthermore, experimental results suggest that these events can occur in even larger technology nodes as several device generations have been tested. Proof for potentially destructive single-event latch-up event has been shown both through experimental results and through simulations. In addition, the impact of low-energy protons in a mixed-field environment has been evaluated through simulations and through experimental campaigns at both the CHARM facility at CERN and at the RADEF facility. Recommendations for radiation hardness assurance for environments with an abundance of electrons such as the ESA JUICE mission have been made and a comparison to the more traditional strategies has been performed.