Single-Event Radiation Effects in Hardened and State-of-the-art Components for Space and High- Energy Accelerator Applications
In this work, the physical mechanisms of electron-induced single-event eﬀects have been studied. Simulations using Monte Carlo codes such as FLUKA have been performed to study in more detailed the mechanisms by which electrons deposit charge in the sensitive volumes in modern electronic devices. Experimental results from several irradiation campaigns at facilities such as VESPER at CERN in Geneva, Switzerland, and RADEF in Jyväskylä, Finland have shown that electron-induced single-event eﬀects are possible. Furthermore, experimental results suggest that these events can occur in even larger technology nodes as several device generations have been tested. Proof for potentially destructive single-event latch-up event has been shown both through experimental results and through simulations. In addition, the impact of low-energy protons in a mixed-ﬁeld environment has been evaluated through simulations and through experimental campaigns at both the CHARM facility at CERN and at the RADEF facility. Recommendations for radiation hardness assurance for environments with an abundance of electrons such as the ESA JUICE mission have been made and a comparison to the more traditional strategies has been performed. ...
- Artikkeli I: Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., . . . Virtanen, A. (2017). High-Energy Electron-Induced SEUs and Jovian Environment Impact. IEEE Transactions on Nuclear Science, 64 (8), 2016-2022. DOI: 10.1109/TNS.2017.2713445
- Artikkeli II: Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., . . . Virtanen, A. (2018). Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs. IEEE Transactions on Nuclear Science, 65 (8), 1715-1723. DOI: 10.1109/TNS.2018.2843388
- Artikkeli III: Tali, M., Alía, R. G., Brugger, M., Ferlet-Cavrois, V., Corsini, R., Farabolini, W., . . . Virtanen, A. (2019). Mechanisms of Electron-Induced Single Event Latchup. IEEE Transactions on Nuclear Science, 66 (1), 437-443. DOI: 10.1109/TNS.2018.2884537
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Bosser, Alexandre Louis (University of Jyväskylä, 2017)Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory ...
The pion single-event latch-up cross-section enhancement : mechanisms and consequences for accelerator hardness assurance Coronetti, Andrea; Alia Garcia, Ruben; Cerutti, Francesco; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigne, Frederic (Institute of Electrical and Electronics Engineers (IEEE), 2021)Pions make up a large part of the hadronic environment typical of accelerator mixed-fields. Characterizing device cross-sections against pions is usually disregarded in favour of tests with protons, whose single-event ...
Coronetti, Andrea; Alía, Rubén García; Cecchetto, Matteo; Hajdas, Wojtek; Söderström, Daniel; Javanainen, Arto; Saigné, Frédéric (Institute of Electrical and Electronics Engineers, 2020)The pion resonance in the nuclear reaction cross section is seen to have direct impact on the Single Event Effect (SEE) cross-section of modern electronic devices. This was experimentally observed for Single Event Upsets ...
Relevance and guidelines of radiation effect testing beyond the standards for electronic devices and systems used in space and at accelerators Coronetti, Andrea (2021)Radiation effect testing is a key element of the radiation hardness assurance process needed to ensure the compliance with respect to the reliability and availability requirements of both space and accelerator electronic ...
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...