Development of a MeV ion beam lithography system in Jyväskylä
Gorelick, S., Ylimäki, T., Sajavaara, T., Laitinen, M., & Whitlow, H. (2007). Development of a MeV ion beam lithography system in Jyväskylä. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 260 (1), 77-80. doi:10.1016/j.nimb.2007.01.260
Published inNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
© 2007 Elsevier B.V. This is a final draft version of an article whose final and definitive form has been published by Elsevier. Published in this repository with the kind permission of the publisher.
A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5–500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.