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dc.contributor.authorJavanainen, Arto
dc.date.accessioned2012-10-26T06:46:45Z
dc.date.available2012-10-26T06:46:45Z
dc.date.issued2012
dc.identifier.isbn978-951-39-4727-9
dc.identifier.otheroai:jykdok.linneanet.fi:1233280
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/40097
dc.description.abstractThe unavoidable presence of particle radiation in space and on the ground combined with constantly evolving technology necessitates a deep understanding of the basic mechanisms underlying radiation effects in materials and electronic devices. This thesis provides an overview of the different radiation environments, with a review of the interaction mechanisms between energetic particles and matter. In this work a new semi-empirical model for estimating the electronic stopping force of solids for heavy ions is introduced. Radiation effects occurring in microelectronics due to particle radiation are also discussed with a brief introduction to radiation hardness assurance (RHA) testing of electronics. The thesis introduces the RADiation Effects Facility (RADEF) of the Accelerator Laboratory in University of Jyväskylä and its utilization in the RHA testing. The experimental part of this thesis consists of data concerning the electronic stopping force of silicon for heavy ions, and heavy-ion induced charge yield in silicon dioxide. For the stopping force measurements a new method called B–TOF was developed and utilized, the details of which are given in this thesis. The stopping force data are used for parameterization of the developed semi-empirical model, which in turn is the basis for a stopping force prediction code. This code is being used by the European Space Agency in its heavy-ion irradiation facilities. Both of the experimental sections include previously unpublished results, which will improve knowledge of the interactions of energetic particles in bulk materials and electronic devices.fi
dc.format.extentverkkoaineisto (109 sivua).
dc.language.isoeng
dc.publisherUniversity of Jyväskylä
dc.relation.ispartofseriesResearch report / Department of Physics, University of Jyväskylä
dc.subject.otherradiaton effects
dc.subject.otherelectronics
dc.subject.otherstopping force
dc.subject.otherheavy ions
dc.subject.othersilicon
dc.subject.othersilicon dioxide
dc.subject.otherrecombination
dc.titleParticle radiation in microelectronics
dc.typeDiss.fi
dc.identifier.urnURN:ISBN:978-951-39-4727-9
dc.type.dcmitypeTexten
dc.type.ontasotVäitöskirjafi
dc.type.ontasotDoctoral dissertationen
dc.contributor.tiedekuntaMatemaattis-luonnontieteellinen tiedekuntafi
dc.contributor.tiedekuntaFaculty of Mathematics and Scienceen
dc.contributor.yliopistoUniversity of Jyväskyläen
dc.contributor.yliopistoJyväskylän yliopistofi
dc.contributor.oppiaineFysiikkafi
dc.relation.issn0075-465X
dc.relation.numberinseriesno. 5/2012
dc.rights.accesslevelopenAccessfi
dc.subject.ysofysiikka
dc.subject.ysohiukkassäteily
dc.subject.ysomikroelektroniikka


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