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Particle radiation in microelectronics

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Research report / Department of Physics, University of Jyväskylä
Authors
Javanainen, Arto
Date
2012
Discipline
Fysiikka

 
The unavoidable presence of particle radiation in space and on the ground combined with constantly evolving technology necessitates a deep understanding of the basic mechanisms underlying radiation effects in materials and electronic devices. This thesis provides an overview of the different radiation environments, with a review of the interaction mechanisms between energetic particles and matter. In this work a new semi-empirical model for estimating the electronic stopping force of solids for heavy ions is introduced. Radiation effects occurring in microelectronics due to particle radiation are also discussed with a brief introduction to radiation hardness assurance (RHA) testing of electronics. The thesis introduces the RADiation Effects Facility (RADEF) of the Accelerator Laboratory in University of Jyväskylä and its utilization in the RHA testing. The experimental part of this thesis consists of data concerning the electronic stopping force of silicon for heavy ions, and heavy-ion induced charge yield in silicon dioxide. For the stopping force measurements a new method called B–TOF was developed and utilized, the details of which are given in this thesis. The stopping force data are used for parameterization of the developed semi-empirical model, which in turn is the basis for a stopping force prediction code. This code is being used by the European Space Agency in its heavy-ion irradiation facilities. Both of the experimental sections include previously unpublished results, which will improve knowledge of the interactions of energetic particles in bulk materials and electronic devices. ...
Publisher
University of Jyväskylä
ISBN
978-951-39-4727-9
ISSN Search the Publication Forum
0075-465X
Contains publications
  • Artikkeli I: Javanainen, A., Malkiewicz, T., Perkowski, J., Trzaska, W., Berger, G., Hajdas, W., Harboe-Sørensen, R., Kettunen, H., Lyapin, V., Mutterer, M., Pirojenko, A., Riihimäki, I., Sajavaara, T., Tyurin, G., Whitlow, H., & Virtanen, A. (2007). Linear energy transfer of heavy ions in silicon. IEEE Transactions on Nuclear Science, 54,1158. DOI: 10.1109/TNS.2007.895121
  • Artikkeli II: Javanainen, A., Sillanpää, M., Trzaska, W., Virtanen, A., Berger, G., Hajdas, W., Harboe-Sorensen, R., Kettunen, H., Malkiewicz, T., Perkowski, J., Pirojenko, A., Riihimäki, I., Sajavaara, T., Tyurin, G., & Whitlow, H. (2009). Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species. IEEE Transactions on Nuclear Sciience, 56(4), 2242-2246. DOI: 10.1109/TNS.2008.2009983
  • Artikkeli III: Javanainen, A., Schwank, J., Shaneyfelt, M., Harboe-Sorensen, R., Virtanen, A., Kettunen, H., Dalton, S., Dodd, P., & Jaksic, A. (2009). Heavy-ion induced charge yield in MOSFETs. IEEE Transactions on Nuclear Science, 56(6), 3367-3371. DOI: 10.1109/tns.2009.2033687
  • Artikkeli IV: Javanainen, A., Trzaska, W., Harboe-Sørensen, R., Virtanen, A., Berger, G., & Hajdas, W. (2010). Semi-empirical LET Descriptions of Heavy Ions Used in the European Component Irradiation Facilities. IEEE Transactions on Nuclear Science, 57(4), 1946-1649. DOI: 10.1109/TNS.2009.2036353
  • Artikkeli V: Javanainen, A. (2012). A simple expression for electronic stopping force of heavy ions in solids. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 285, 158-161. DOI: 10.1016/j.nimb.2012.05.013
Keywords
radiaton effects electronics stopping force heavy ions silicon silicon dioxide recombination fysiikka hiukkassäteily mikroelektroniikka
URI

http://urn.fi/URN:ISBN:978-951-39-4727-9

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