dc.contributor.author | Javanainen, Arto | |
dc.date.accessioned | 2012-10-26T06:46:45Z | |
dc.date.available | 2012-10-26T06:46:45Z | |
dc.date.issued | 2012 | |
dc.identifier.isbn | 978-951-39-4727-9 | |
dc.identifier.other | oai:jykdok.linneanet.fi:1233280 | |
dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/40097 | |
dc.description.abstract | The unavoidable presence of particle radiation in space and on the ground combined
with constantly evolving technology necessitates a deep understanding of the
basic mechanisms underlying radiation effects in materials and electronic devices.
This thesis provides an overview of the different radiation environments, with a
review of the interaction mechanisms between energetic particles and matter. In this
work a new semi-empirical model for estimating the electronic stopping force of solids
for heavy ions is introduced. Radiation effects occurring in microelectronics due to
particle radiation are also discussed with a brief introduction to radiation hardness
assurance (RHA) testing of electronics.
The thesis introduces the RADiation Effects Facility (RADEF) of the Accelerator
Laboratory in University of Jyväskylä and its utilization in the RHA testing.
The experimental part of this thesis consists of data concerning the electronic
stopping force of silicon for heavy ions, and heavy-ion induced charge yield in silicon
dioxide. For the stopping force measurements a new method called B–TOF was
developed and utilized, the details of which are given in this thesis. The stopping
force data are used for parameterization of the developed semi-empirical model, which
in turn is the basis for a stopping force prediction code. This code is being used by
the European Space Agency in its heavy-ion irradiation facilities.
Both of the experimental sections include previously unpublished results, which
will improve knowledge of the interactions of energetic particles in bulk materials and
electronic devices. | fi |
dc.format.extent | verkkoaineisto (109 sivua). | |
dc.language.iso | eng | |
dc.publisher | University of Jyväskylä | |
dc.relation.ispartofseries | Research report / Department of Physics, University of Jyväskylä | |
dc.relation.haspart | <b>Artikkeli I:</b> Javanainen, A., Malkiewicz, T., Perkowski, J., Trzaska, W., Berger, G., Hajdas, W., Harboe-Sørensen, R., Kettunen, H., Lyapin, V., Mutterer, M., Pirojenko, A., Riihimäki, I., Sajavaara, T., Tyurin, G., Whitlow, H., & Virtanen, A. (2007). Linear energy transfer of heavy ions in silicon. <i>IEEE Transactions on Nuclear Science, 54,1158.</i> DOI: <a href="https://doi.org/10.1109/TNS.2007.895121"target="_blank"> 10.1109/TNS.2007.895121</a> | |
dc.relation.haspart | <b>Artikkeli II:</b> Javanainen, A., Sillanpää, M., Trzaska, W., Virtanen, A., Berger, G., Hajdas, W., Harboe-Sorensen, R., Kettunen, H., Malkiewicz, T., Perkowski, J., Pirojenko, A., Riihimäki, I., Sajavaara, T., Tyurin, G., & Whitlow, H. (2009). Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species. <i>IEEE Transactions on Nuclear Sciience, 56(4), 2242-2246.</i> DOI: <a href="https://doi.org/10.1109/TNS.2008.2009983"target="_blank"> 10.1109/TNS.2008.2009983</a> | |
dc.relation.haspart | <b>Artikkeli III:</b> Javanainen, A., Schwank, J., Shaneyfelt, M., Harboe-Sorensen, R., Virtanen, A., Kettunen, H., Dalton, S., Dodd, P., & Jaksic, A. (2009). Heavy-ion induced charge yield in MOSFETs. <i>IEEE Transactions on Nuclear Science, 56(6), 3367-3371.</i> DOI: <a href="https://doi.org/10.1109/tns.2009.2033687"target="_blank"> 10.1109/tns.2009.2033687</a> | |
dc.relation.haspart | <b>Artikkeli IV:</b> Javanainen, A., Trzaska, W., Harboe-Sørensen, R., Virtanen, A., Berger, G., & Hajdas, W. (2010). Semi-empirical LET Descriptions of Heavy Ions Used in the European Component Irradiation Facilities. <i>IEEE Transactions on Nuclear Science, 57(4), 1946-1649.</i> DOI: <a href="https://doi.org/10.1109/TNS.2009.2036353"target="_blank"> 10.1109/TNS.2009.2036353</a> | |
dc.relation.haspart | <b>Artikkeli V:</b> Javanainen, A. (2012). A simple expression for electronic stopping force of heavy ions in solids. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 285, 158-161.</i> DOI: <a href="https://doi.org/10.1016/j.nimb.2012.05.013"target="_blank"> 10.1016/j.nimb.2012.05.013</a> | |
dc.rights | In Copyright | |
dc.subject.other | radiaton effects | |
dc.subject.other | electronics | |
dc.subject.other | stopping force | |
dc.subject.other | heavy ions | |
dc.subject.other | silicon | |
dc.subject.other | silicon dioxide | |
dc.subject.other | recombination | |
dc.title | Particle radiation in microelectronics | |
dc.type | Diss. | |
dc.identifier.urn | URN:ISBN:978-951-39-4727-9 | |
dc.type.dcmitype | Text | en |
dc.type.ontasot | Väitöskirja | fi |
dc.type.ontasot | Doctoral dissertation | en |
dc.contributor.tiedekunta | Matemaattis-luonnontieteellinen tiedekunta | fi |
dc.contributor.tiedekunta | Faculty of Mathematics and Science | en |
dc.contributor.yliopisto | University of Jyväskylä | en |
dc.contributor.yliopisto | Jyväskylän yliopisto | fi |
dc.contributor.oppiaine | Fysiikka | fi |
dc.relation.issn | 0075-465X | |
dc.relation.numberinseries | no. 5/2012 | |
dc.rights.accesslevel | openAccess | |
dc.subject.yso | fysiikka | |
dc.subject.yso | hiukkassäteily | |
dc.subject.yso | mikroelektroniikka | |
dc.rights.url | https://rightsstatements.org/page/InC/1.0/ | |