Particle radiation in microelectronics

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Show simple item record Javanainen, Arto 2012-10-26T06:46:45Z 2012-10-26T06:46:45Z 2012
dc.identifier.isbn 978-951-39-4727-9
dc.identifier.issn 0075-465X
dc.identifier.uri en
dc.description.abstract The unavoidable presence of particle radiation in space and on the ground combined with constantly evolving technology necessitates a deep understanding of the basic mechanisms underlying radiation effects in materials and electronic devices. This thesis provides an overview of the different radiation environments, with a review of the interaction mechanisms between energetic particles and matter. In this work a new semi-empirical model for estimating the electronic stopping force of solids for heavy ions is introduced. Radiation effects occurring in microelectronics due to particle radiation are also discussed with a brief introduction to radiation hardness assurance (RHA) testing of electronics. The thesis introduces the RADiation Effects Facility (RADEF) of the Accelerator Laboratory in University of Jyväskylä and its utilization in the RHA testing. The experimental part of this thesis consists of data concerning the electronic stopping force of silicon for heavy ions, and heavy-ion induced charge yield in silicon dioxide. For the stopping force measurements a new method called B–TOF was developed and utilized, the details of which are given in this thesis. The stopping force data are used for parameterization of the developed semi-empirical model, which in turn is the basis for a stopping force prediction code. This code is being used by the European Space Agency in its heavy-ion irradiation facilities. Both of the experimental sections include previously unpublished results, which will improve knowledge of the interactions of energetic particles in bulk materials and electronic devices. fi
dc.format.extent verkkoaineisto (109 sivua).
dc.language.iso eng
dc.publisher University of Jyväskylä
dc.relation.ispartofseries Research report / Department of Physics, University of Jyväskylä no. 5/2012.
dc.rights openAccess fi
dc.subject.other radiaton effects
dc.subject.other electronics
dc.subject.other stopping force
dc.subject.other heavy ions
dc.subject.other silicon
dc.subject.other silicon dioxide
dc.subject.other recombination
dc.title Particle radiation in microelectronics
dc.type Diss. fi
dc.identifier.urn URN:ISBN:978-951-39-4727-9
dc.subject.ysa fysiikka
dc.subject.ysa hiukkassäteily
dc.subject.ysa mikroelektroniikka
dc.subject.kota 114
dc.type.dcmitype Text en
dc.type.ontasot Väitöskirja fi
dc.type.ontasot Doctoral dissertation en
dc.contributor.tiedekunta Matemaattis-luonnontieteellinen tiedekunta fi
dc.contributor.tiedekunta Faculty of Mathematics and Science en
dc.contributor.yliopisto University of Jyväskylä en
dc.contributor.yliopisto Jyväskylän yliopisto fi
dc.contributor.oppiaine fysiikka fi

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