dc.contributor.author | Söderström, Daniel | |
dc.contributor.author | Matana Luza, Lucas | |
dc.contributor.author | Martins Pio De Mattos, André | |
dc.contributor.author | Gil, Thierry | |
dc.contributor.author | Kettunen, Heikki | |
dc.contributor.author | Niskanen, Kimmo | |
dc.contributor.author | Javanainen, Arto | |
dc.contributor.author | Dilillo, Luigi | |
dc.date.accessioned | 2023-09-11T11:30:43Z | |
dc.date.available | 2023-09-11T11:30:43Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Söderström, D., Matana Luza, L., Martins Pio De Mattos, A., Gil, T., Kettunen, H., Niskanen, K., Javanainen, A., & Dilillo, L. (2023). Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs. <i>IEEE Transactions on Nuclear Science</i>, <i>70</i>(8), 1861-1869. <a href="https://doi.org/10.1109/TNS.2023.3295435" target="_blank">https://doi.org/10.1109/TNS.2023.3295435</a> | |
dc.identifier.other | CONVID_184021579 | |
dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/89026 | |
dc.description.abstract | Three SDRAMs from the same manufacturer with technology node sizes 110, 72, and 63 nm, were investigated under proton irradiation and using scanning electron microscopy (SEM). The radiation-induced faults were characterized and compared between the different part types. The devices under test (DUT) were irradiated with protons and experienced single event effects (SEE) in the form of stuck bits and single bit upsets (SBU). Analysis of the data retention times of bits which had SBU and were stuck during irradiation, showed similar patterns of retention time degradation, suggesting that the SBUs and stuck bits in all three part types could be induced by the same mechanism. Detailed data retention time analyses were also performed before and after irradiation to investigate the evolution of data retention times after irradiation, and after periods of annealing. The largest radiation-induced retention time losses were found to anneal, but the bits least affected directly after irradiation experienced decreasing data retention time as a function of annealing time. SEM imaging showed differences in the memory cell structure between the tested part types. The largest node size device was the most sensitive to the radiation, both for SEE and cumulative radiation effects. | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.ispartofseries | IEEE Transactions on Nuclear Science | |
dc.rights | In Copyright | |
dc.subject.other | SDRAM | |
dc.subject.other | radiation effects | |
dc.subject.other | testing | |
dc.subject.other | transistors | |
dc.subject.other | capacitors | |
dc.subject.other | scanning electron microscopy | |
dc.subject.other | protons | |
dc.subject.other | proton irradiation | |
dc.subject.other | retention time | |
dc.subject.other | single event effects | |
dc.subject.other | stuck bits | |
dc.subject.other | technology nodes | |
dc.title | Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs | |
dc.type | article | |
dc.identifier.urn | URN:NBN:fi:jyu-202309115053 | |
dc.contributor.laitos | Fysiikan laitos | fi |
dc.contributor.laitos | Department of Physics | en |
dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
dc.contributor.oppiaine | Accelerator Laboratory | en |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
dc.description.reviewstatus | peerReviewed | |
dc.format.pagerange | 1861-1869 | |
dc.relation.issn | 0018-9499 | |
dc.relation.numberinseries | 8 | |
dc.relation.volume | 70 | |
dc.type.version | acceptedVersion | |
dc.rights.copyright | © 2023, IEEE | |
dc.rights.accesslevel | openAccess | fi |
dc.relation.grantnumber | 101008126 | |
dc.relation.grantnumber | 101008126 | |
dc.relation.grantnumber | 4000124504/18/NL/KML/zx | |
dc.relation.grantnumber | 721624 | |
dc.relation.grantnumber | 721624 | |
dc.relation.projectid | info:eu-repo/grantAgreement/EC/H2020/101008126/EU//RADNEXT | |
dc.relation.projectid | info:eu-repo/grantAgreement/EC/H2020/721624/EU//RADSAGA | |
dc.subject.yso | kondensaattorit | |
dc.subject.yso | protonit | |
dc.subject.yso | testaus | |
dc.subject.yso | säteilytys | |
dc.subject.yso | elektronimikroskopia | |
dc.subject.yso | transistorit | |
dc.subject.yso | käyttömuistit | |
dc.format.content | fulltext | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p11972 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p12428 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p8471 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p15129 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p18917 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p16104 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p15250 | |
dc.rights.url | http://rightsstatements.org/page/InC/1.0/?language=en | |
dc.relation.doi | 10.1109/TNS.2023.3295435 | |
dc.relation.funder | European Commission | en |
dc.relation.funder | European Space Agency | en |
dc.relation.funder | European Commission | en |
dc.relation.funder | Euroopan komissio | fi |
dc.relation.funder | European Space Agency | fi |
dc.relation.funder | Euroopan komissio | fi |
jyx.fundingprogram | RIA Research and Innovation Action, H2020 | en |
jyx.fundingprogram | Others | en |
jyx.fundingprogram | MSCA Innovative Training Networks (ITN) | en |
jyx.fundingprogram | RIA Research and Innovation Action, H2020 | fi |
jyx.fundingprogram | Muut | fi |
jyx.fundingprogram | MSCA Innovative Training Networks (ITN) | fi |
jyx.fundinginformation | This study has been supported by the European Union’s Horizon 2020 research and innovation program through the Marie Sklodowska-Curie RADSAGA and RADNEXT projects under grant agreements No 721624 and No 10100812. It has also been supported by the European Space Agency through contract 4000124504/18/NL/KML/zk. | |
dc.type.okm | A1 | |