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dc.contributor.authorBarthel, Armin
dc.contributor.authorRoberts, Joseph
dc.contributor.authorNapari, Mari
dc.contributor.authorFrentrup, Martin
dc.contributor.authorHuq, Tahmid
dc.contributor.authorKovács, András
dc.contributor.authorOliver, Rachel
dc.contributor.authorChalker, Paul
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMassabuau, Fabien
dc.date.accessioned2021-01-25T14:06:30Z
dc.date.available2021-01-25T14:06:30Z
dc.date.issued2020
dc.identifier.citationBarthel, A., Roberts, J., Napari, M., Frentrup, M., Huq, T., Kovács, A., Oliver, R., Chalker, P., Sajavaara, T., & Massabuau, F. (2020). Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering. <i>Micromachines</i>, <i>11</i>(12), Article 1128. <a href="https://doi.org/10.3390/mi11121128" target="_blank">https://doi.org/10.3390/mi11121128</a>
dc.identifier.otherCONVID_47793224
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/73788
dc.description.abstractThe suitability of Ti as a band gap modifier for alpha-Ga2O3 was investigated, taking advantage of the isostructural alpha phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)(2)O-3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality alpha-(TixGa1-x)(2)O-3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% <= x <= 5.3%, the band gap energy varies by similar to 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on alpha-Ga2O3.en
dc.format.mimetypeapplication/pdf
dc.languageeng
dc.language.isoeng
dc.publisherMDPI
dc.relation.ispartofseriesMicromachines
dc.rightsCC BY 4.0
dc.subject.othergalliumoksidi
dc.subject.otherlaajakaistaiset puolijohteet
dc.subject.othergallium oxide
dc.subject.otherwide band gap semiconductors
dc.subject.othersolar-blind detection
dc.subject.otheratomic layer deposition
dc.subject.otherthin films
dc.subject.otheralloying
dc.subject.otherbandgap
dc.titleTi Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202101251250
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiainePhysicsen
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn2072-666X
dc.relation.numberinseries12
dc.relation.volume11
dc.type.versionpublishedVersion
dc.rights.copyright© 2020 the Authors
dc.rights.accesslevelopenAccessfi
dc.subject.ysopuolijohteet
dc.subject.ysogallium
dc.subject.ysotitaani
dc.subject.ysoatomikerroskasvatus
dc.subject.ysoohutkalvot
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p28650
jyx.subject.urihttp://www.yso.fi/onto/yso/p18969
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
jyx.subject.urihttp://www.yso.fi/onto/yso/p16644
dc.rights.urlhttps://creativecommons.org/licenses/by/4.0/
dc.relation.doi10.3390/mi11121128
jyx.fundinginformationThis project is funded by the Engineering and Physical Sciences Research Council (EPSRC Grants No. EP/P00945X/1 and No. EP/M010589/1). T.N.H. acknowledges funding from the EPSRC Centre for Doctoral Training in Graphene Technology (Grant No. EP/L016087/1). This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3.
dc.type.okmA1


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