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Atomikerroskasvatuksella kasvatetut oksidikalvot ja niiden siirto väliaikaiselta polymeerisubstraatilta kohdepinnalle

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Authors
Manninen, Emmi
Date
2020
Discipline
FysiikkaPhysics
Copyright
This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.

 
Atomikerroskasvatus eli ALD on edistyksellinen ohutkalvojen kasvatusmenetelmä, jonka periaatteellisena ideana on kasvattaa tasapaksu ohutkalvo alustalle eli substraatille nimensä mukaisesti atomikerros kerrallaan. Menetelmää käytetään laajasti mm. elektroniikan komponenttien valmistuksessa ja varsinkin viime vuosina atomikerroskasvatusta on alettu hyödyntää myös mikroelektroniikan taipuisissa komponenteissa. Nykyisissä sovelluksissa kalvon kasvatus suoritetaan yleensä suoraan kohdepinnalle, ja kasvatusta väliaikaiselle alustalle onkin tutkittu melko vähän. Tässä työssä selvitettiin, voidaanko atomikerroskasvatuksella valmistettuja ohutkalvoja käyttää siirtopintoina. Siirtopinnalla tarkoitetaan tässä yhteydessä ohutkalvoa, joka voidaan siirtää väliaikaisen substraatin päältä uudelle kohdepinnalle. Prosessissa väliaikainen substraatti hävitetään lämmön tai liuotuksen avulla. Väliaikaisina substraatteina tutkimuksessa käytettiin polymeereja ja kohdepintoina piikiekon palasta sekä Kapton-polymeeria. Tutkimus koostui oleellisesti kahdesta eri kokeellisesta osuudesta, kalvon kasvattamisesta ja sen siirrosta. Kasvatettavaksi kalvoksi valittiin sinkkioksidi, joka ei kuitenkaan sellaisenaan kasvanut kaikille polymeereille. Ongelma ratkaistiin kasvattamalla näille polymeereille sinkkioksidikerroksen alle alumiinioksidikerros. Kasvatusten jälkeinen kalvon siirto tuotti ongelmia, eikä kalvo siirtynyt onnistuneesti kummallakaan siirtotavalla kummallekaan kohdepinnalle. Syitä siirron epäonnistumiselle voisivat olla esimerkiksi liian suoraviivaiset siirtomenetelmät. ...
 
Atomic layer deposition, known as ALD, is a progressive method of thin film deposition. The principled idea behind the technique is to grow a uniform thin film on a target surface one atomic layer at a time. The technique is used widely for example in electrical components and especially during the past few years ALD has also been used in the flexible components in microelectronics. With current applications the growth of a thin film is usually performed directly on the target surface and the growth on temporary substrate has been rarely studied. In this work it was studied whether ALD grown thin films could be used as transferable thin films. In this thesis transferable thin film means a thin film that can be transferred from a temporary substrate to a new target surface. During the process the temporary substrate is removed either using heat or solvent. The temporary substrates in this work were polymers and the target surfaces were pieces of silicon and Kapton. The research primarily consisted of two parts, ALD growth and transfer of the grown thin films. Grown thin film was selected to be zinc oxide which however didn't grow on some of the polymers. The problem was solved by growing an aluminium oxide layer beneath the zinc oxide layer. The transfer after the growths was problematic and both methods of transfer were unsuccessful for both target materials. The unsuccessful transfers could be due to the too straightforward methods of transfers. ...
 
Keywords
siirtopinta ionisuihkumenetelmät ToF-ERDA kohdepinta polymeerit ohutkalvot atomikerroskasvatus
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http://urn.fi/URN:NBN:fi:jyu-202007305436

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