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dc.contributor.authorBroas, Mikael
dc.contributor.authorLemettinen, Jori
dc.contributor.authorSajavaara, Timo
dc.contributor.authorTilli, Markku
dc.contributor.authorVuorinen, Vesa
dc.contributor.authorSuihkonen, Sami
dc.contributor.authorPaulasto-Kröckel, Mervi
dc.date.accessioned2019-05-31T10:33:56Z
dc.date.available2021-08-01T21:35:08Z
dc.date.issued2019
dc.identifier.citationBroas, M., Lemettinen, J., Sajavaara, T., Tilli, M., Vuorinen, V., Suihkonen, S., & Paulasto-Kröckel, M. (2019). In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres. <i>Thin Solid Films</i>, <i>682</i>, 147-155. <a href="https://doi.org/10.1016/j.tsf.2019.03.010" target="_blank">https://doi.org/10.1016/j.tsf.2019.03.010</a>
dc.identifier.otherCONVID_28971663
dc.identifier.otherTUTKAID_80966
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/64285
dc.description.abstractAtomic-layer-deposited Al2O3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al2O3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N2, H2, and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier BV
dc.relation.ispartofseriesThin Solid Films
dc.rightsCC BY-NC-ND 4.0
dc.subject.otherbarrier film
dc.subject.otherhigh-temperature annealing
dc.subject.othercrystallization
dc.titleIn-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201905292871
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2019-05-29T09:15:15Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange147-155
dc.relation.issn0040-6090
dc.relation.numberinseries0
dc.relation.volume682
dc.type.versionacceptedVersion
dc.rights.copyright© 2019 Published by Elsevier B.V.
dc.rights.accesslevelopenAccessfi
dc.subject.ysoatomikerroskasvatus
dc.subject.ysoohutkalvot
dc.subject.ysoalumiinioksidi
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
jyx.subject.urihttp://www.yso.fi/onto/yso/p16644
jyx.subject.urihttp://www.yso.fi/onto/yso/p38971
dc.rights.urlhttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.relation.doi10.1016/j.tsf.2019.03.010
dc.type.okmA1


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