Depth profiling of Al2O3+ TiO2 nanolaminates by means of a time-of-flight energy spectromete
Laitinen, M., Sajavaara, T., Rossi, M., Julin, J., Puurunen, R.L., Suni, T., Ishida, T., Fujita, H., Arstila, K., Brijs, B., & Whitlow, H. (2011). Depth profiling of Al2O3+ TiO2 nanolaminates by means of a time-of-flight energy spectromete. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(24), 3021-3024. https://doi.org/10.1016/j.nimb.2011.04.074
Julkaistu sarjassa
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and AtomsPäivämäärä
2011Tekijänoikeudet
© 2011 Elsevier B.V. This is a final draft version of an article whose final and definitive form has been published by Elsevier. Published in this repository with the kind permission of the publisher.
Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.
Julkaisija
ElsevierISSN Hae Julkaisufoorumista
0168-583XJulkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/21400150