Thermal properties in low dimensional structures below 1 K
In this thesis thermal properties of low dimensional structures were experimentally
studied at low temperatures with the help of tunnel junction thermometry and the
Joule heating technique. The main objects of study were electron-phonon coupling
in disordered thin metal films and phonon transport in suspended silicon nitride
membranes. Our aim has been to clarify the effect of the phonon dimensionality,
i.e. the effect of boundaries to the phonon modes and the transition from 3D to 2D
phonons. The dimensionality cross over had not been observed before this work
even though it is fabricationally a standard procedure to create the low dimensional
environments for nanoscale applications and devices. The main conclusion here is
that the nature of thermal phenomena can differ drastically in lower dimensional
structures compared to bulk behaviour, and sometimes surprisingly advantageous
ways.
Publisher
University of JyväskyläISBN
978-951-39-3584-9ISSN Search the Publication Forum
0075-465XContains publications
- Artikkeli I: Karvonen, J., Taskinen, L., & Maasilta, I. (2005). Observation of disorder-induced weakening of electron-phonon interaction in thin noble-metal films. Physical Review B, 72, 012302. DOI: 10.1103/physrevb.72.012302
- Artikkeli II: Karvonen, J., Taskinen, L., & Maasilta, I. (2007). Influence of temperature gradients on tunnel junction thermometry below 1 K: Cooling and electron-phonon coupling. Journal of Low Temperature Physics, 146, 213–226. DOI: 10.1007/s10909-006-9264-y
- Artikkeli III: Karvonen, J., & Maasilta, I. (2007). Influence of Phonon Dimensionality on Electron Energy Relaxation. Physical Review Letters, 99, 145503. DOI: 10.1103/PhysRevLett.99.145503
- Artikkeli IV: Karvonen, J., & Maasilta, I. (2007). Observation of phonon dimensionality effects on electron energy relaxation. Journal of Physics: Conference Series, 92, 012043. DOI: 10.1088/1742-6596/92/1/012043
- Artikkeli V: Karvonen, J., Kühn, T., & Maasilta, I. (2009). Phonon transport in suspended silicon nitride membranes at low temperatures. Journal of Physics: Conference Series, 150, 012019. DOI: 10.1088/1742-6596/150/1/012019
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