Properties of SiGe alloys studied by ion beams and suppression of Al film superconductivity by implantation
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University of JyväskyläISBN
978-951-39-3180-3ISSN Search the Publication Forum
0075-465XContains publications
- Artikkeli I: Touboltsev, V., Jalkanen, P., Räisänen, J., & Smulders, P. (2003). On Erbium Lattice Location in Ion Implanted Si0.75Ge0.25 Alloy: Computer Simulation of Rutherford Backscattering/channelling. Journal of Applied Physics, 93(7), 3668. DOI: 10.1063/1.1555269
- Artikkeli II: Touboltsev, V., & Jalkanen, P. (2005). Erbium Implanted Silicon-Germanium. Journal of Applied Physics, 97. DOI: 10.1063/1.1828606
- Artikkeli III: Tuboltsev, V., Jalkanen, P., Kolodyazhnaya, M., & Räisänen, J. (2005). Composition dependence of Si-xGe-1-x sputter yield. Physical Review B, 72, 205434. DOI: 10.1103/PhysRevB.72.205434
- Artikkeli IV: Jalkanen, P., Touboltsev, V., Koivisto, H., Suominen, P., Suppula, T., Arutyunov, K., & Räisänen, J. (2005). Superconductivity suppression in Fe-implanted thin Al films. Journal of Applied Physics, 98, 016105. DOI: 10.1063/1.1946205
- Artikkeli V: Jalkanen, P., Tuboltsev, V., Virtanen, A., Arutyunov, K., Räisänen, J., Lebedev, O., & Tendeloo, G. V. (2007). Critical temperature modification of low dimensional superconductors by spin doping. Solid State Communications, 142(7), 407-411. DOI: 10.1016/j.ssc.2007.03.011
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