Annealing study of bismuth thin films

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Show simple item record Oksanen, Mika 2010-06-23T08:40:40Z 2010-06-23T08:40:40Z 2010
dc.identifier.uri en
dc.description.abstract Electrical and magnetotransport properties of thin bismuth films were studied in the range of 4.2 - 295 K in applied magnetic fields up to 3.5 T. The bismuth films were deposited on mica and SiO substrates and subjected to post deposition thermal annealing in order to improve the crystal structure. Annealed films showed lower resistivities and higher magnetoresistance as compared to the non annealed samples, however, the resistivity behavior was non-metallic and the mean grain size in the films were not significantly increased. A two carrier model for magnetoresistance and Hall coefficient was used to extract carrier mobilities and concentrations from the transport data.
dc.format.extent 38 sivua
dc.language.iso eng
dc.rights This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited. en
dc.rights Julkaisu on tekijänoikeussäännösten alainen. Teosta voi lukea ja tulostaa henkilökohtaista käyttöä varten. Käyttö kaupallisiin tarkoituksiin on kielletty. fi
dc.rights openAccess fi
dc.subject.other nanofysiikka
dc.subject.other vismutti
dc.title Annealing study of bismuth thin films
dc.identifier.urn URN:NBN:fi:jyu-201006232140
dc.subject.ysa fysiikka
dc.type.dcmitype Text en
dc.type.ontasot Pro gradu fi
dc.type.ontasot Master’s thesis en
dc.contributor.tiedekunta matemaattis-luonnontieteellinen tiedekunta fi
dc.contributor.tiedekunta Faculty of Sciences en
dc.contributor.laitos fysiikan laitos fi
dc.contributor.laitos Department of Physics en
dc.contributor.yliopisto University of Jyväskylä en
dc.contributor.yliopisto Jyväskylän yliopisto fi
dc.contributor.oppiaine fysiikka fi
dc.contributor.oppiaine Physics en

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