Surface plasmon effects on carbon nanotube field effect transistors
Isoniemi, T., Johansson, A., Hakala, T., Rinkiö, M., Törmä, P., Toppari, J., & Kunttu, H. (2011). Surface plasmon effects on carbon nanotube field effect transistors. Applied Physics Letters, 99, 31105. doi:10.1063/1.3614543
Julkaistu sarjassa
Applied Physics LettersPäivämäärä
2011Oppiaine
FysiikkaTekijänoikeudet
© 2011 American Institute of Physics. Published in this repository with the kind permission of the publisher.
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the
conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via
Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal
layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in
effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is
discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities
and within a near-infrared range.