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Surface plasmon effects on carbon nanotube field effect transistors

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Isoniemi, T., Johansson, A., Hakala, T., Rinkiö, M., Törmä, P., Toppari, J., & Kunttu, H. (2011). Surface plasmon effects on carbon nanotube field effect transistors. Applied Physics Letters, 99, 31105. https://doi.org/10.1063/1.3614543
Published in
Applied Physics Letters
Authors
Isoniemi, Tommi |
Johansson, Andreas |
Hakala, Tommi |
Rinkiö, Marcus |
Törmä, Päivi |
Toppari, Jussi |
Kunttu, Henrik
Date
2011
Discipline
FysiikkaPhysics
Copyright
© 2011 American Institute of Physics. Published in this repository with the kind permission of the publisher.

 
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range.
Publisher
American Institute of Physics
ISSN Search the Publication Forum
0003-6951
Keywords
Nanofysiikka hiilinanoputki plasmoni transistori field effect transistors nanotube devices hiilinanoputket polaritonit pintaplasmonit
DOI
https://doi.org/10.1063/1.3614543
URI

http://urn.fi/URN:NBN:fi:jyu-201606062895

Publication in research information system

https://converis.jyu.fi/converis/portal/detail/Publication/21416589

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