Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.

• Dosimetry study in an X-ray irradiator : Monte Carlo simulations and experimental results on radio-photoluminescence samples 

  Alem, Abrham (2023)

  Matter’s exposure to ionizing radiations leads to a variety of possible interactions. Depending on the specific interaction type, energy can be deposited into matter via different mechanisms. The quantification of the ...

• Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions 

  Andreou, Charalambos M.; González-Castaño, Diego Miguel; Gerardin, Simone; Bagatin, Marta; Rodriguez, Faustino Gómez; Paccagnella, Alessandro; Prokofiev, Alexander V.; Javanainen, Arto; Virtanen, Ari; Liberali, Valentino; Calligaro, Cristiano; Nahmad, Daniel; Georgiou, Julius (MDPI AG, 2019)

  The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced ...

• Proton direct ionization upsets at tens of MeV 

  Coronetti, Andrea; Alia, Ruben Garcia; Lucsanyi, David; Wang, Jialei; Saigne, Frederic; Javanainen, Arto; Leroux, Paul; Prinzie, Jeffrey (Institute of Electrical and Electronics Engineers (IEEE), 2023)

  Experimental mono-energetic proton single-event upset (SEU) cross-sections of a 65 nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at ...

• Development of a telescope detector for Sr-90 detection 

  Hussain, Junaid (2022)

  Nuclear catastrophes and accidents release harmful fission products containing long-lived (Se-79, Zr-93, Tc-99, Pd-107, Sn-126, I-129, and Cs-135) radioisotopes having half-life of hundreds of thousands or millions of years ...

• Improved stability of black silicon detectors using aluminum oxide surface passivation 

  Heinonen, Juha; Haarahiltunen, Antti; Kettunen, Heikki; Jaatinen, Jukka; Rossi, Mikko; Heino, Jouni; Savin, Hele; Juntunen, Mikko A. (SPIE, 2021)

  We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 ˚C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. ...