Point-defect mediated diffusion in intrinsic SiGe-alloys
The aim of this thesis was to obtain fundamental diffusion data and to
improve the understanding of point-defect mediated dopant diffusion in Si1-
xGex alloys. The thesis consists of experimental studies published in
international journals and a summary section.
The experimental part consists of the following four articles: In article I,
diffusion coefficients and Arrhenius parameters have been determined in
relaxed intrinsic Si1-xGex in the whole concentration range (0<x<1). In article
II, diffusion coefficients and Arrhenius parameters have been determined for
Ga and Sn diffusion in relaxed intrinsic and relaxed heavily p-doped
germanium. In article III, diffusivity values have been determined for Ga in
relaxed intrinsic Si1-xGex in the whole concentration range at 907 ºC. In article
IV, diffusion coefficients and Arrhenius parameters have been determined for
Si in intrinsic B20-structured FeSi. All the experiments discussed employed
the modified radiotracer technique. The radioactive tracers were produced at
the IGISOL facility located in Jyväskylä, Finland (31Si and 66Ga) and at the
ISOLDE facility located in CERN, Switzerland (123Sn).
In the summary section, an attempt has been made to understand the diffusion
behavior of substitutionally solved group III, IV and V elements in Si1-xGex
alloys based on point-defect transport capacities and properties of pointdefect-
impurity interactions. The dissection is based on best available
literature data as well as the data obtained during this study (articles I-IV).
...


Publisher
University of JyväskyläISBN
978-951-39-3796-6ISSN Search the Publication Forum
0075-465XMetadata
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