Samankaltainen aineisto
Näytetään aineistoja, joilla on samankaltainen nimeke tai asiasanat.
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Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configuration
Napari, Mari; Lahtinen, Manu; Veselov, Alexey; Julin, Jaakko; Østreng, Erik; Sajavaara, Timo (Elsevier Sequoia, 2017)Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma ... -
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Perros, A.; Bosund, M.; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, L.; Huhtio, T.; Lipsanen, H. (American Vacuum Society, 2012)The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled ... -
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
Yang, Jun; Bahrami, Amin; Ding, Xingwei; Zhao, Panpan; He, Shiyang; Lehmann, Sebastian; Laitinen, Mikko; Julin, Jaakko; Kivekäs, Mikko; Sajavaara, Timo; Nielsch, Kornelius (Wiley-VCH Verlag, 2022)SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is ... -
The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges
Napari, Mari; Tarvainen, Olli; Kinnunen, Sami; Arstila, Kai; Julin, Jaakko; Fjellvåg, Ø. S.; Weibye, K.; Nilsen, O.; Sajavaara, Timo (IOP Publishing, 2017)Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra i ... -
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
Broas, Mikael; Sippola, Perttu; Sajavaara, Timo; Vuorinen, Vesa; Perros, Alexander Pyymaki; Lipsanen, Harri; Paulasto-Kröckel, Mervi (American Institute of Physics, 2016)Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in ...
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