Hydrogen incorporation in Al2O3 and ZnO thin films grown by atomic layer deposition

Abstract
Atomic layer deposition (ALD) is a novel deposition technique that produces thin and conformal films even on high aspect ratio structures and objects with subnanometer thickness precision. Applications of ALD range from semiconductor industry to packaging and medicine. In this thesis, two metal oxides, Al2O3 and ZnO, were deposited using both temporal and spatial ALD. While temporal ALD is more established deposition method, spatial ALD offers higher throughput and a possibility to deposit thin flms on larger substrates. In this study Al2O3 and ZnO were deposited using trimethylaluminium (TMA) and diethylzinc (DEZ), respectively, and using water as an oxygen source. Both Al2O3 and ZnO are common and widely studied ALD materials and the reaction mechanism of these materials are thought to be well understood. However, nonideal conditions such as low deposition temperature or fast deposition can lead to high impurity concentrations. In this thesis precursors containing rare isotopes, namely deuterium (2H) and 18O, were used to study the impurity incorporation with different deposition conditions. It was found out that the impurity hydrogen incorporation depends on the deposition temperature as well as from purging time between the precursor pulses. At low temperatures and when short purges are used, hydrogen in the flm originates mainly from metal precursor. The opposite is true for the high temperatures and long purging times. Similar conclusions apply for both temporal and spatial ALD. Keywords: ALD, Al2O3, ZnO, ToF-ERDA, heavy water
Main Author
Format
Theses Doctoral thesis
Published
2022
Series
ISBN
978-951-39-9198-2
Publisher
Jyväskylän yliopisto
The permanent address of the publication
https://urn.fi/URN:ISBN:978-951-39-9198-2Use this for linking
ISSN
2489-9003
Language
English
Published in
JYU Dissertations
Contains publications
  • Artikkeli I: Kinnunen, S., Arstila, K., & Sajavaara, T. (2021). Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors. Applied Surface Science, 546, Article 148909. DOI: 10.1016/j.apsusc.2020.148909. JYX: jyx.jyu.fi/handle/123456789/74224
  • Artikkeli II: Kinnunen, S., Lahtinen, M., Arstila, K., & Sajavaara, T. (2021). Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition. Coatings, 11(5), Article 542. DOI: 10.3390/coatings11050542
  • Artikkeli III: Kinnunen, S., & Sajavaara, T. (2022). Spatial ALD of Al2O3 and ZnO using heavy water. Surface and Coatings Technology, 441, Article 128456. DOI: 10.1016/j.surfcoat.2022.128456
License
In CopyrightOpen Access
Copyright© The Author & University of Jyväskylä

Share