Electrical and thermal transport properties of semiconductor and metal structures at low temperature
Julkaistu sarjassa
Research report / Department of Physics, University of JyväskyläTekijät
Päivämäärä
2005Oppiaine
FysiikkaJulkaisija
University of JyväskyläISBN
978-951-39-3159-9ISSN Hae Julkaisufoorumista
0075-465XJulkaisuun sisältyy osajulkaisuja
- Artikkeli I: Savin, A. M., Prunnila, M., Kivinen, P. P., Pekola, J. P., Ahopelto, J., and Manninen, A. J. (2001). Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling. Applied Physics Letters, 79, 1471–1473. DOI: 10.1063/1.1399313
- Artikkeli II: Savin, A., Pekola, J., Kivinen, P., & Manninen, A. (2002). Electron-phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions. Physica E, 13, 773. DOI: 10.1016/s1386-9477(02)00280-1
- Artikkeli III: Kivinen, P., Savin, A., Zgirski, M., Törmä, P., Pekola, J., Prunnila, M., & Ahopelto, J. (2003). Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film. Journal of Applied Physics, 94, 3201. DOI: 10.1063/1.1592627
- Artikkeli IV: Savin, A., Kivinen, P., Törmä, P., Pekola, J., Prunnila, M., & Ahopelto, J. (2003). Application of Superconductor-Semiconductor Schottky Barrier for Electron Cooling. Physica B, 329, 1481. DOI: 10.1016/s0921-4526(02)02400-6
- Artikkeli V: Savin, A., Pekola, J., Prunnila, M., Ahopelto, J., & Kivinen, P. (2004). Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film. Physica Scripta, 2004, T114. DOI: 10.1088/0031-8949/2004/T114/013
- Artikkeli VI: Kivinen, P., Prunnila, M., Savin, A., Törmä, P., Pekola, J., & Ahopelto, J. (2004). Electron-phonon heat transport in degenerate Si at low temperatures. Physica Status Solidi (c). DOI: 10.1002/pssc.200405351
- Artikkeli VII: Prunnila, M., Kivinen, P., Savin, A., Törmä, P., & Ahopelto, J. (2005). Intervalley-scattering induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures. Physical Review Letters, 95, 206602. DOI: 10.1103/physrevlett.95.206602
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