Atomically Sharp 1D Interfaces in 2D Lateral Heterostructures of VSe2─NbSe2 Monolayers

Abstract
van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe2─1H-NbSe2 lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure by using scanning tunneling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the 1D interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explored the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials.
Main Authors
Format
Articles Research article
Published
2024
Series
Subjects
Publication in research information system
Publisher
American Chemical Society
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-202411127126Use this for linking
Review status
Peer reviewed
ISSN
1936-0851
DOI
https://doi.org/10.1021/acsnano.4c10302
Language
English
Published in
ACS Nano
Citation
  • Huang, X., González-Herrero, H., Silveira, O. J., Kezilebieke, S., Liljeroth, P., & Sainio, J. (2024). Atomically Sharp 1D Interfaces in 2D Lateral Heterostructures of VSe2─NbSe2 Monolayers. ACS Nano, Early online. https://doi.org/10.1021/acsnano.4c10302
License
CC BY 4.0Open Access
Funder(s)
Research Council of Finland
Research Council of Finland
Funding program(s)
Academy Research Fellow, AoF
Research costs of Academy Research Fellow, AoF
Akatemiatutkija, SA
Akatemiatutkijan tutkimuskulut, SA
Research Council of Finland
Additional information about funding
This research made use of the Aalto Nanomicroscopy Center (Aalto NMC) facilities and was supported by the European Research Council (ERC-2017-AdG no. 788185 “Artificial Designer Materials”) and Academy of Finland (Academy professor funding nos. 318995 and 320555, Academy research fellow nos. 338478 and 346654). Computing resources from the Aalto Science-IT project and CSC, Helsinki, are gratefully acknowledged. X.H. thanks Mr. HUANG Ruojun and Mrs. XIONG Dongyan. H.G-H. acknowledges financial support from the Spanish State Research Agency under grant Ramón y Cajal fellowship RYC2021-031050-I.
Copyright© 2024 The Authors. Published by American Chemical Society

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